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SMAJ33AHE3/5A PDF预览

SMAJ33AHE3/5A

更新时间: 2024-11-14 22:42:31
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
6页 103K
描述
TVS DIODE 33V 53.3V DO214AC

SMAJ33AHE3/5A 数据手册

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SMAJ5.0A thru SMAJ188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface-Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in unidirectional and bidirectional  
• 400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 % (300 W above 78 V)  
SMA (DO-214AC)  
Available  
Cathode  
Anode  
• Excellent clamping capability  
• Very fast response time  
(unidirectional)  
(bidirectional)  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
3D Models  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VBR uni-directional  
6.40 V to 231 V  
MECHANICAL DATA  
V
BR bi-directional  
6.40 V to 231 V  
5.0 V to 188 V  
400 W, 300 W  
3.3 W  
Case: SMA (DO-214AC)  
VWM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
PPPM  
PD  
IFSM  
40 A  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
TJ max.  
Polarity  
Package  
150 °C  
Unidirectional, bidirectional  
SMA (DO-214AC)  
(“_X” denotes revision code e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
DEVICES FOR BIDIRECTION APPLICATIONS  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
For bidirectional use CA suffix (e.g. SMAJ10CA).  
Electrical characteristics apply in both directions.  
Polarity: for unidirectional types the band denotes cathode  
end, no marking on bidirectional types  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
400  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a waveform (1)  
IPPM  
See next table  
3.3  
A
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)  
Operating junction and storage temperature range  
PD  
W
IFSM  
40  
A
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2. Rating is 300 W above 78 V  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 30-Jun-2021  
Document Number: 88390  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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