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SMAJ33A PDF预览

SMAJ33A

更新时间: 2024-11-15 20:18:07
品牌 Logo 应用领域
MERITEK 局域网光电二极管
页数 文件大小 规格书
4页 278K
描述
Trans Voltage Suppressor Diode, 400W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

SMAJ33A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:SMA, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.36
其他特性:EXCELLENT CLAMPING CAPABILITY最大击穿电压:40.6 V
最小击穿电压:36.7 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
湿度敏感等级:1最大非重复峰值反向功率耗散:400 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:3.3 W
最大重复峰值反向电压:33 V表面贴装:YES
技术:AVALANCHE端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

SMAJ33A 数据手册

 浏览型号SMAJ33A的Datasheet PDF文件第2页浏览型号SMAJ33A的Datasheet PDF文件第3页浏览型号SMAJ33A的Datasheet PDF文件第4页 
Transient Voltage Suppressors  
SMAJ Series  
MERITEK  
FEATURES  
For surface mounted applications in order to optimize board space.  
Low profile package.  
Built-in strain relief.  
Glass passivated junction.  
Low inductance.  
Excellent clamping capability.  
Repetition Rate (duty cycle): 0.01%.  
SMA/DO-214AC  
Fast response time: typically less than 1.0ps from 0 volt to VBR for Unidirectional types.  
Typical IR less than 1μA above 10V.  
High Temperature soldering: 260°C/10 seconds at terminals.  
Plastic package has Underwriters Laboratory Flammability 94V-O.  
MECHANICAL DATA  
Case: JEDEC DO-214AC. Molded plastic over glass passivated junction.  
Terminal: Solder plated, solderable per MIL-STD-750, Method 2026.  
Polarity: Color band denotes cathode except Bidirectional.  
Standard Packaging: 12mm tape (EIA STD RS- 481).  
Weight: 0.002 ounce, 0.061 grams.  
DEVICES FOR BIPOLAR APPLICATION  
For Bidirectional use C or CA suffix for type SMAJ5.0 through type SMAJ440 (e.g. SMAJ5.0CA, SMAJ440CA);  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25ć ambient temperature unless otherwise specified.  
RATING  
SYMBOL  
PPPM  
VALUE  
Minimum 400  
See Table  
UNIT  
Watts  
Amps  
Peak Pulse Power Dissipation on 10/1000ȝs waveform. (Note 1, Note 2, Fig. 1)  
Peak Pulse Current on 10/1000ȝs waveform. (Note 1,Fig. 3)  
Steady State Power Dissipation at TL =75ćˈLead length .375” (9.5mm).  
(Note 2, Fig. 5)  
IPPM  
PM(AV)  
3.3  
Watts  
Peak Forward Surge Currentˈ8.3ms Single Half Sine-Wave Superimposed  
on Rated Load. (JEDEC Method) (Note 3, Fig. 6)  
IFSM  
40  
Amps  
Operating junction and Storage Temperature Range.  
TJ , TSTG  
-65 to +150  
ć
Notes: ꢀꢀ1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25ć per Fig. 2.  
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.  
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minute maximum.  
All specifications are subject to change without notice.  
1
Rev 7  

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