Package outline
Features
• 400W peak pulse power capability with a 10/1000 μs
waveform, repetition rate (duty cycle): 0.01%.
SMA/DO-214AC
• Low profile surface mounted application in order to
optimize board space.
• Excellent clamping capability.
• Low incremental surge resistance.
• Fast response time from 0V to VBR, typically less than
1 ps for uni-directional & 5 ns for bi-directional types.
0.118(3.00)
0.096(2.45)
0.067 (1.70)
0.051 (1.30)
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
0.177(4.50)
0.157(3.99)
Compliant to Halogen-free
•
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
Mechanical data
0.060(1.52)
0.030(0.76)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA
• Terminals : Solder plated, solderable per
0.008(0.203)MAX.
0.208(5.28)
0.188(4.80)
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
Maximum ratings (AT TA=25oC unless otherwise noted)
Value
400
UNIT
W
Symbol
PPPM
PARAMETER
CONDITIONS
Peak Power Dissipation
with a 10/1000 μs waveform,
Note 1, 2 & Fig. 1
with a 10/1000 μs waveform
at TL=75OC, Note 2
IPPM
See Table 1
1.0
Peak Pulse current
A
Steady State Power Dissipation
W
PM(AV)
40
8.3ms Single Half Sine-Wave, Note 3
A
V
Peak Forward Surge Current
IFSM
VF
at 25A
For Uni-Directional Types Only, Note 4
Maximum Instantaneours Forward Voltage
3.5/6.5
OC
OC
Operating temperature range
Storage temperature range
TJ
-55 ~ +150
-55 ~ +150
TSTG
Note 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25OC per Fig. 2
2. Mounted on copper pad area of 0.2"x0.2" (5.0x5.0 mm) per Fig 5
3. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
4. VF < 3.5V for VBR < 200V and VF< 6.5V for VBR >201V.
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
Document ID
AS-3080002
Issued Date
2003/03/08
Revised Date
2023/10/12
Revision
Page.
F
5
Page 1