Features
Applications
nꢀ SurfaceꢀMountꢀSMAꢀpackage
nꢀꢀStandoffꢀVoltage:ꢀ5ꢀtoꢀ220ꢀvolts
nꢀ PowerꢀDissipation:ꢀ400ꢀwatts
nꢀ RoHSꢀcompliant*
nꢀ Protectionꢀofꢀpowerꢀbuses
nꢀꢀProtectionꢀofꢀI/Oꢀinterfaces
nꢀ Overvoltageꢀtransientꢀprotection
nꢀ Telecom,ꢀcomputer,ꢀindustrialꢀandꢀꢀ
ꢀ
consumerꢀelectronicsꢀapplications
nꢀ AEC-Q101ꢀcompliant**
SMAJ-Q Transient Voltage Suppressor Diode Series
General Information
Agency Recognition
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection
applications, in compact chip package DO-214AC (SMA) size format. The Transient Voltage
Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 220 V.
Typical fast response times are less than 1.0 picosecond from 0 V to Breakdown Voltage.
Description
UL
File Number: E153537
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick
and place equipment and the flat configuration minimizes roll away.
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)
A
Parameter
Symbol
Value
Unit
(Note 1,2)
Minimum Peak Pulse Power Dissipation (T = 1 ms)
P
P
400
Watts
PK
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
I
40
Amps
FSM
(Note 3)
Operating Temperature Range
Storage Temperature Range
T
-55 to +150
-55 to +150
°C
°C
J
T
STG
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.
A
2
2. Mounted on 5.0 mm (0.03 mm thick) copper pads to each terminal.
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)
A
Maximum Maximum Maximum Maximum
Working Maximum
Breakdown
Voltage
BR
Clamping
Voltage
Peak
Pulse
Clamping
Voltage
Peak
Pulse
Peak
Reverse
Leakage
Unidirectional Device
Bidirectional Device
Reverse
Voltage
V
(Volts)
@ I
Current
(10/1000 µs)
@ I
Current
(8/20 µs)
pp
pp
@ V
RWM
(10/1000 µs)
(8/20 µs)
@ I
(mA)
I
V
c
(V)
I
V
c
(V)
I
T
R
pp
pp
Part No.
Marking
Part No.
Marking Min. Max.
V
(V)
RWM
(μA)
(A)
(A)
SMAJ5.0A-Q
SMAJ6.0A-Q
SMAJ6.5A-Q
SMAJ7.0A-Q
SMAJ7.5A-Q
SMAJ8.0A-Q
SMAJ8.5A-Q
SMAJ9.0A-Q
SMAJ10A-Q
SMAJ11A-Q
SMAJ12A-Q
SMAJ13A-Q
SMAJ14A-Q
SMAJ15A-Q
SMAJ16A-Q
HEQ
HGQ
HKQ
HMQ
HPQ
HRQ
HTQ
HVQ
HXQ
HZQ
IEQ
SMAJ5.0CA-Q
SMAJ6.0CA-Q
SMAJ6.5CA-Q
SMAJ7.0CA-Q
SMAJ7.5CA-Q
SMAJ8.0CA-Q
SMAJ8.5CA-Q
SMAJ9.0CA-Q
SMAJ10CA-Q
SMAJ11CA-Q
SMAJ12CA-Q
SMAJ13CA-Q
SMAJ14CA-Q
SMAJ15CA-Q
SMAJ16CA-Q
TEQ
TGQ
TKQ
TMQ
TPQ
TRQ
TTQ
TVQ
TXQ
TZQ
UEQ
UGQ
UKQ
UMQ
UPQ
6.40 7.00
6.67 7.37
7.22 7.98
7.78 8.60
8.33 9.21
8.89 9.83
9.44 10.4
10.0 11.1
11.1 12.3
12.2 13.5
13.3 14.7
14.4 15.9
15.6 17.2
16.7 18.5
17.8 19.7
10
10
10
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
800
800
500
200
100
50
20
10
5
1.0
1.0
1.0
1.0
1.0
1.0
9.2
43.5
38.8
35.7
33.3
31.0
29.4
27.8
26.0
23.5
22.0
20.1
18.6
17.2
16.4
15.4
12.0
13.4
14.6
15.6
16.8
17.7
18.7
20.0
22.1
23.7
25.9
28.0
30.2
31.7
33.8
217.5
194.0
178.5
166.5
155.0
147.0
139.0
130.0
117.5
110.0
100.5
93.0
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
IGQ
IKQ
IMQ
IPQ
86.0
82.0
77.0
15
16
Notes: 1. Suffix ‘A’ denotes a 5 % tolerance unidirectional device.
2. Suffix ‘CA’ denotes a 5 % tolerance bidirectional device.
~ Continued on next page ~
WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov
*RoHSꢀDirectiveꢀ2015/863,ꢀMarꢀ31,ꢀ2015ꢀandꢀAnnex.
**”Q”ꢀpartꢀnumberꢀsuffixꢀindicatesꢀAEC-Q101ꢀcompliance.
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.
Usersꢀshouldꢀverifyꢀactualꢀdeviceꢀperformanceꢀinꢀtheirꢀspecificꢀapplications.ꢀ
Theꢀproductsꢀdescribedꢀhereinꢀandꢀthisꢀdocumentꢀareꢀsubjectꢀtoꢀspecificꢀlegalꢀdisclaimersꢀasꢀsetꢀforthꢀonꢀtheꢀlastꢀpageꢀofꢀthisꢀdocument,ꢀandꢀatꢀwww.bourns.com/docs/legal/disclaimer.pdf.
5秒后页面跳转
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
AMD宣布全球裁员约1000人，调整战略聚焦增长
英伟达新AI芯片Rubin或提前半年亮相
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
