Datasheet > SM8A01NSFP

SM8A01NSFP

更新时间： 2022-06-24 15:41:48

品牌	Logo	应用领域
大中积体 - SINOPWER		/
页数	文件大小	规格书
11页	624K
描述
N-Channel Enhancement Mode MOSFET

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数据手册

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SM8A01NSFP 数据手册

SM8A01NSF/SM8A01NSFP

(T_A= 25°C unless otherwise noted)

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

Static Characteristics

V =0V, I =250 A

800

930

BV_DSS

Drain-Source Breakdown Voltage

T_J=150°C

V_DS=640V, V_GS=0V

T_J=150°C

I_DSS

Zero Gate Voltage Drain Current

2.5

200

4.5

±100

V_GS(th)

I_GSS

Gate Threshold Voltage

V =V , I =250 A

3.5

GS DS

Gate Leakage Current

V_GS=±30V, V_DS=0V

V_GS=10V, I_DS=8A

R_DS(ON)

Drain-Source On-state Resistance

0.33 0.38

Diode Characteristics

V_SD

t_rr

Diode Forward Voltage

I_SD=13A, V_GS=0V

I_SD=13A, V_R=480V

0.87

385

1.3

Reverse Recovery Time

Q_rr

Reverse Recovery Charge

dl /dt=100A/ s

I_rm

Peak Reverse Recovery Current

Dynamic Characteristics^f

V_GS=0V,V_DS=0V,

F=1MHz

R_G

Gate Resistance

1.45

C_iss

C_oss

C_rss

t_d(ON)

T_r

Input Capacitance

1820 2500

V_GS=0V,

V_DS=25V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

745

V =400V, R =30 ,

I_DS=13A, V_GEN=10V,

R =6

t_d(OFF)

T_f

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics^f

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DS=640V, V_GS=10V,

I_DS=13A

Note e Pulse test ; pulse width≤300ms, duty cycle≤2%.

：

Note f Guaranteed by design, not subject to production testing.

：

Rev. A.4 - January, 2018

www.sinopowersemi.com

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