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SM8A27T

更新时间: 2024-02-28 10:24:40
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 96K
描述
Surface Mount PAR® Transient Voltage Suppressors

SM8A27T 数据手册

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SM8A27T  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design  
passivated anisotropic rectifier technology  
• TJ = 175 °C capability suitable for high  
reliability and automotive requirement  
• Low leakage current  
• Low forward voltage drop  
• High surge capability  
• Meets ISO7637-2 surge specification  
DO-218 Compatible  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VBR  
27 V  
6600 W  
8 W  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting,  
especially for automotive load dump protection application.  
P
PPM (10 x 1000 μs)  
PD  
VWM  
22 V  
IRSM  
130 A  
MECHANICAL DATA  
IFSM  
700 A  
Case: DO-218AC  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
TJ max.  
Polarity  
Package  
175 °C  
Uni-directional  
DO-218AC  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Heatsink is anode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
6600  
8.0  
UNIT  
W
Peak pulse power dissipation with 10/1000 μs waveform  
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)  
PD  
W
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially  
decaying waveform  
IRSM  
130  
A
Maximum working stand-off voltage  
VWM  
IFSM  
22.0  
700  
V
A
Peak forward surge current 8.3 ms single half sine-wave  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
BREAKDOWN VOLTAGE  
TEST CURRENT  
STAND-OFF VOLTAGE  
VBR AT IT  
(V)  
DEVICE TYPE  
IT  
VWM  
(V)  
(mA)  
MIN.  
MAX.  
SM8A27T  
24  
30  
10  
22  
Revision: 24-Mar-15  
Document Number: 87915  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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