SM8J48A

更新时间： 2024-09-17 09:22:07

品牌	Logo	应用领域
东芝 - TOSHIBA		功率控制
页数	文件大小	规格书
5页	221K
描述
AC POWER CONTROL APPLICATIONS

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中文翻译

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数据手册

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SM8J48A 数据手册

SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A

TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM8G48,USM8G48,SM8J48,USM8J48

SM8G48A,USM8G48A,SM8J48A,USM8J48A

AC POWER CONTROL APPLICATIONS

l Repetitive Peak Off−State Voltage : V

= 400, 600V

DRM

= 8A

T (RMS)

l R.M.S On−State Current

l Gate Trigger Current

: I

= 30mA Max.

= 20mA Max. (“A”Type)

Unit: mm

USM8G48, USM8J48, USM8G48A, USM8J48A

SM8G48, SM8J48, SM8G48A, SM8J48A

JEDEC

JEITA

TOSHIBA

―

JEDEC

JEITA

TOSHIBA

―

13-10J1A

13-10J2A

Weight: 1.7g

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

RATING

UNIT

(U)SM8G48

400

600

(U)SM8G48A

Repetitive Peak

Off-State Voltage

DRM

(U)SM8J48

(U)SM8J48A

R.M.S On−State Current

T (RMS)

80 (50Hz)

88 (60Hz)

Peak One Cycle Surge On−State

TSM

Current (Non-Repetitive)

Note 1: V

= 0.5×Rated

DRM

≤ 12A

I t Limit Value

I t

A s

≥ 10µs

Critical Rate of Rise of On−State

di / dt

A / µs

≤ 250ns

Current

(Note 1)

= I ×2.0

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Forward Gate Voltage

Peak Forward Gate Current

Junction Temperature

0.5

°C

G (AV)

−40~125

Storage Temperature Range

stg

2001-07-10

12 3 4 5

中文翻译

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