Datasheet > SM8A01NSFP

SM8A01NSFP

更新时间： 2022-06-24 15:41:48

品牌	Logo	应用领域
大中积体 - SINOPWER		/
页数	文件大小	规格书
11页	624K
描述
N-Channel Enhancement Mode MOSFET

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数据手册

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SM8A01NSFP 数据手册

SM8A01NSF/SM8A01NSFP

(T_A=25°C Unless Otherwise Noted)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings

V_DSS

V_GSS

T_J

Drain-Source Voltage

800

±30

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

Pulse Drain Current Tested

150

°C

T_STG

I_S

-55 to 150

13 ^a

I_DP

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

40^a

13 ^a

9 ^a

I_D

Continuous Drain Current

208

P_D

Maximum Power Dissipation for TO-220

Maximum Power Dissipation for TO-220FP

35.5

14.2

0.6

R_qJC

R_qJA

Thermal Resistance-Junction to Case for TO-220

Thermal Resistance-Junction to Case for TO-220FP

Thermal Resistance-Junction to Ambient

°C/W

3.5

62.5

Drain-Source Avalanche Ratings

dv/dt ^b

250

2.5

0.6

V/ns

MOSFET dv/dt ruggedness

E_AS

Avalanche Energy, Single Pulsed

Avalanche Current

I_AR

E_AR

Repetitive Avalanche Energy

Note a Limited by maximum junction temperature.

：

Note b V =640V, I =13A.

：

Note c I =2.5A, V =50V, T=25°C.

：

Note d Repetitive Rating : Pulse width limited by maximum junction temperature.

：

Rev. A.4 - January, 2018

www.sinopowersemi.com

123 4 5 6 7...11

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