Datasheet > SM6T200A-HE3/52

SM6T200A-HE3/52

更新时间： 2024-11-13 19:53:31

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	97K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

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SM6T200A-HE3/52 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

SM6T200A-HE3/52 数据手册

SM6T Series

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• 600 W peak pulse power capability with a

10/1000 µs waveform

• Available inuni-directional and bi-directional

• Excellent clamping capability

• Low inductance

• Meets MSL level 1, per J-STD-020, LF maximum

DO-214AA (SMB)

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

PRIMARY CHARACTERISTICS

V_BR

6.8 V to 220 V

P_PPM

600 W

P_D

5.0 W

_FSM(uni-directional only)

T_Jmax.

100 A

150 °C

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g.

SM6T12CA).

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

600

UNIT

Peak pulse power dissipation on 10/1000 µs waveform ⁽¹⁾⁽²⁾(Fig. 1)

Peak power pulse current with a 10/1000 µs waveform ⁽¹⁾(Fig. 3)

Power dissipation on infinite heatsink T_A= 50 °C

See next table

5.0

P_D

Peak forward surge current 10 ms single half sine-wave uni-directional only ⁽²⁾

I_FSM

100

Operating junction and storage temperature range

T_J, T_STG

- 65 to +150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88385

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与SM6T200A-HE3/52相关器件

型号	品牌	获取价格	描述	数据表
SM6T200A-HE3/5B	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
SM6T200AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode,
SM6T200AHM3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode,
SM6T200A-M3/5B	VISHAY	获取价格	TVS DIODE 171V 274V DO214AA
SM6T200CA	SUNMATE	获取价格	600W patch TVS transient suppression diode SMB 200V
SM6T200CA	STMICROELECTRONICS	获取价格	TRANSILTM
SM6T200CA	MDE	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SM6T200CA/2	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 171V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SM6T200CA/51-E3	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T200CA/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 171V V(RWM), Bidirectional,

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