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SM6T10CA-E3 PDF预览

SM6T10CA-E3

更新时间: 2024-11-23 18:53:23
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 103K
描述
DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient Suppressor

SM6T10CA-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.69
其他特性:EXCELLENT CLAMPING CAPABILITY最大击穿电压:10.5 V
最小击穿电压:9.5 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:8.55 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

SM6T10CA-E3 数据手册

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SM6T Series  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• 600 W peak pulse power capability with a  
10/1000 µs waveform  
• Available in uni-directional and bi-directional  
• Excellent clamping capability  
• Low inductance  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
DO-214AA (SMB)  
• Solder dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
VBR  
6.8 V to 220 V  
TYPICAL APPLICATIONS  
PPPM  
600 W  
5.0 W  
100 A  
150 °C  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
PD  
I
FSM (uni-directional only)  
TJ max.  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
DEVICES FOR BI-DIRECTION APPLICATIONS  
Epoxy meets UL 94V-0 flammability rating  
For bi-directional devices use CA suffix (e.g.  
SM6T12CA).  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation on 10/1000 µs waveform (1)(2) (Fig. 1)  
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Power dissipation on infinite heatsink TA = 50 °C  
See next table  
5.0  
A
PD  
W
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to +150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal  
Document Number: 88385  
Revision: 04-Sep-07  
www.vishay.com  
81  

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