Datasheet > SM6S33AHE3/2D

SM6S33AHE3/2D

更新时间： 2024-01-03 21:10:37

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	92K
描述
TVS DIODE 33V 53.3V DO218AB

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数据手册
替代型号

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SM6S33AHE3/2D 数据手册

SM6S10A thru SM6S36A

Vishay General Semiconductor

www.vishay.com

Surface Mount PAR^®Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design passivated

anisotropic rectifier technology

• T_J= 175 °C capability suitable for high reliability

and automotive requirement

• Available in uni-directional polarity only

• Low leakage current

• Low forward voltage drop

DO-218AB

• High surge capability

• Meets ISO7637-2 surge specification (varied by test

condition)

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_WM

10 V to 36 V

TYPICAL APPLICATIONS

V_BR

11.1 V to 44.2 V

4600 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting,

especially for automotive load dump protection application.

_PPM(10 x 1000 μs)

_PPM(10 x 10 000 μs)

3600 W

P_D

6 W

I_FSM

600 A

MECHANICAL DATA

Case: DO-218AB

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“X” denotes revision code e.g. A, B, ...)

T_Jmax.

Polarity

Package

175 °C

Uni-directional

DO-218AB

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Polarity: heatsink is anode

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

4600

UNIT

with 10/1000 μs waveform

Peak pulse power dissipation

with 10/10 000 μs waveform

3600

Power dissipation on infinite heatsink at T_C= 25 °C (fig. 1)

Peak pulse current with 10/1000 μs waveform

P_D

6.0

(1)

I_PPM

See next table

600

Peak forward surge current 8.3 ms single half sine-wave

Operating junction and storage temperature range

I_FSM

T_J, T_STG

-55 to +175

°C

Note

(1)

Non-repetitive current pulse at T_A= 25 °C

Revision: 04-Dec-2018

Document Number: 88384

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SM6S33AHE3/2D 替代型号

型号	品牌	替代类型	描述	数据表
SM6S33A-E3/2D	VISHAY	完全替代	Trans Voltage Suppressor Diode, 4600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与SM6S33AHE3/2D相关器件

型号	品牌	获取价格	描述	数据表
SM6S33AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 4600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM6S33CA	SUNMATE	获取价格	4600W patch TVS transient suppression diode DO-218 33V
SM6S33HE3/2D	VISHAY	获取价格	DIODE 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB, ROHS COMPLIANT, PLASTIC PACKAG
SM6S36	VISHAY	获取价格	Surface Mount Automotive Transient Voltage Suppressors
SM6S36A	VISHAY	获取价格	Surface Mount Automotive Transient Voltage Suppressors
SM6S36A	SUNMATE	获取价格	4600W patch TVS transient suppression diode DO-218 36V
SM6S36A	MCC	获取价格	Trans Voltage Suppressor Diode,
SM6S36A	WON-TOP	获取价格	SMD
SM6S36A	BL Galaxy Electrical	获取价格	36V,4600W,Surface Mount TVS
SM6S36A2E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 3600W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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