Datasheet > SM6T100A

SM6T100A

更新时间： 2024-02-16 18:15:48

品牌	Logo	应用领域
MDE		/
页数	文件大小	规格书
3页	82K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

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中文翻译

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技术参数
数据手册

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SM6T100A 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.68
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SM6T100A 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414

1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com

SM6T SERIES

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-5.0 TO 220 Volts

600 Watt Peak Pulse Power

FEATURES

• For surface mounted applications in order to

optimize board space

• Low profile package

• Built-in strain relief

• Glass passivated junction

• Low inductance

• Excellent clamping capability

• Repetition rate (duty cycle):0.01%

• Fast response time: typically less than

1.0 ps from 0 volts to BV for unidirectional types

• Typical IR less than 1µA above 10V

• High temperature soldering:

250°C/10 seconds at terminals

• Plastic package has Underwriters Laboratory

Flammability Classification 94 V-O

MECHANICAL DATA

Case: JEDEC DO214AA. Molded plastic over glass

passivated junction

Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026

Dimensions in inches (millimeters)

Polarity: Color band denoted positive end (cathode)

except Bidirectional

Standard Packaging: 12mm tape (EIA STD RS-481)

Weight: 0.003 ounces, 0.093 grams)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use CA Suffix for types SM6T6V8CA thru types SM6T220CA

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

Minimum 600

SEE TABLE 1

100

UNITS

Watts

Amps

Peak Pulse Power Dissipation on 10/1000 µs

waveform (NOTE 1, 2, Fig.1)

P_PPM

I_PPM

I_FSM

Peak Pulse Current of on 10/1000 µs waveform (Note 1,Fig 3)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note2, 3)

Operatings and Storage Temperature Range

NOTES:

T_J, T_STG

-55 +150

°C

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

Certified RoHS Compliant

UL File # E223026

12 3

中文翻译

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与SM6T100A相关器件

型号	品牌	获取价格	描述	数据表
SM6T100A/2	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
SM6T100A/5	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
SM6T100A/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
SM6T100A/51-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T100A/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 85.5V V(RWM), Unidirectional,
SM6T100A/52-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T100A/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 85.5V V(RWM), Unidirectional,
SM6T100A/5B-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T100A/5-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMC, 2 PIN, Transient
SM6T100A/CA	STMICROELECTRONICS	获取价格	TransilTM

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