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SM5S33ATHE3/I PDF预览

SM5S33ATHE3/I

更新时间: 2024-11-07 22:58:47
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
5页 95K
描述
TVS DIODE 33V 53.3V DO218AC

SM5S33ATHE3/I 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSSO-C1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:17 weeks风险等级:5.69
其他特性:HIGH RELIABILITY最大击穿电压:40.6 V
最小击穿电压:36.7 V外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-218AC
JESD-30 代码:R-PSSO-C1JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:3600 W
元件数量:1端子数量:1
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性:UNIDIRECTIONAL最大功率耗散:5 W
参考标准:AEC-Q100最大重复峰值反向电压:33 V
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

SM5S33ATHE3/I 数据手册

 浏览型号SM5S33ATHE3/I的Datasheet PDF文件第2页浏览型号SM5S33ATHE3/I的Datasheet PDF文件第3页浏览型号SM5S33ATHE3/I的Datasheet PDF文件第4页浏览型号SM5S33ATHE3/I的Datasheet PDF文件第5页 
SM5S10AT thru SM5S43AT  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design passivated  
anisotropic rectifier technology  
• TJ = 175 °C capability suitable for high reliability  
and automotive requirement  
• Available in uni-directional polarity only  
• Low leakage current  
• Low forward voltage drop  
• High surge capability  
• Meets ISO7637-2 surge specification (varied by test  
condition)  
DO-218 Compatible  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VWM  
10 V to 43 V  
TYPICAL APPLICATIONS  
VBR  
11.1 V to 52.8 V  
3600 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting,  
especially for automotive load dump protection application.  
P
PPM (10 x 1000 μs)  
P
PPM (10 x 10 000 μs)  
2800 W  
PD  
5 W  
IFSM  
500 A  
MECHANICAL DATA  
Case: DO-218AC  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
TJ max.  
Polarity  
175 °C  
Uni-directional  
Package  
DO-218AC  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Heatsink is anode  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
with 10/1000 μs waveform  
Peak pulse power dissipation  
3600  
PPPM  
PD  
W
with 10/10 000 μs waveform  
2800  
5.0  
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)  
Peak pulse current with 10/1000 μs waveform  
W
A
(1)  
IPPM  
See next table  
Peak forward surge current 8.3 ms single half sine-wave  
Operating junction and storage temperature range  
IFSM  
500  
A
TJ, TSTG  
-55 to +175  
°C  
Note  
(1)  
Non-repetitive current pulse at TA = 25 °C  
Revision: 03-Dec-2018  
Document Number: 87609  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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