SM5S Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive
Transient Voltage Suppressors
Stand-off Voltage 10 to 36V
Peak Pulse Power 3600W (10/1000µs)
2800W (10/10,000µs)
DO-218AB
0.628(16.0)
0.592(15.0)
0.539(13.7)
0.524(13.3)
0.116(3.0)
0.093(2.4)
Mounting Pad Layout
0.413(10.5) 0.342(8.7)
0.374(9.5) 0.327(8.3)
0.091(2.3)
0.067(1.7)
0.116(3.0)
0.093(2.4)
0.413(10.5)
0.374(9.5)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
Dimensions in
inches and (millimeters)
0.150(3.8)
0.366(9.3)
0.126(3.2)
0.343(8.7)
LEAD 1
0.138(3.5)
0.098(2.5)
0.606(15.4)
0.583(14.8)
0.197(5.0)
0.185(4.7)
*
Patent #’s:
4,980,315
5,166,769
5,278,095
0.028(0.7)
0.020(0.5)
0.016 (0.4) Min.
0.098(2.5)
0.059(1.5)
LEAD 2/METAL HEATSINK
Features
• Ideally suited for load dump protection
Mechanical Data
Case: Molded plastic body, surface mount with heatsink
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
integrally mounted in the encapsulation
• High temperature stability due to unique oxide passivation
and patented PAR®construction
Terminals: Plated, solderable per MIL-STD-750, Method 2026
Polarity: Heatsink is anode
• Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
Mounting Position: Any
Weight: 0.091 oz., 2.58 g
Packaging codes/options:
• Low leakage current at TJ = 175°C
• High temperature soldering guaranteed:
260°C for 10 seconds at terminals
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
• Meets ISO7637-2 surge spec.
• Low forward voltage drop
Maximum Ratings and Thermal Characteristics(T = 25°C unless otherwise noted)
C
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with 10/1000µs waveform
10/10,000µs waveform
3600
2800
PPPM
W
Steady state power dissipation
PD
IPPM
5.0
See Table 1
500
W
A
Peak pulse current with a 10/1000µs waveform(1)
Peak forward surge current, 8.3ms single half sine-wave
Typical thermal resistance junction to case
Operating junction and storage temperature range
IFSM
A
RθJC
1.0
°C/W
°C
TJ, TSTG
–55 to +175
Notes: (1) Non-repetitive current pulse derated above TA = 25°C
Document Number 88382
06-May-02
www.vishay.com
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