SM520BM~SM5200BM
Voltage 20 ~ 200 V
5.0 AMP Surface Mount Schottky Barrier Rectifiers
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
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Surface mounted applications
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High forward surge current capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
SMBM
MECHANICAL DATA
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Case : SMBM
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Terminals: Solderable per MIL-STD-750, Method 2026
MARKING
Millimeter
Millimeter
Min. Max.
1.0 REF
REF.
REF.
Min.
Max.
Part Number
Marking Code
Part Number
Marking Code
A
B
C
4.2
3.5
5.1
4.4
3.7
5.5
D
E
F
1.9
2.2
SM520BM
SM540BM
SM560BM
S52B
S54B
S56B
SM5100BM
SM5150BM
SM5200BM
S510B
S515B
S520B
1.1
1.3
PACKAGE INFORMATION
Package
MPQ
Leader Size
SMBM
5K
13 inch
ABSOLUTE MAXIMUM RATINGS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Symbol
Unit
SM
SM
SM
SM
SM
SM
520BM
540BM
560BM
5100BM
5150BM
5200BM
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
20
14
20
40
28
40
60
42
60
100
70
150
105
150
200
V
V
V
140
200
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified
Current
IF
5
A
A
Peak Forward Surge Current@ 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
150
Maximum Instantaneous Forward Voltage
@IF=5A
VF
0.55
800
0.7
0.85
V
TJ=25°C
1
Maximum DC Reverse Current
IR
mA
at Rated DC Blocking Voltage
TJ=100°C
50
Typical Junction Capacitance 1
CJ
500
pF
°C/W
°C
Typical Thermal Resistance from Junction to
Ambient 2
RθJA
45
Junction and Storage Temperature
TJ,TSTG
-55~ 150
Notes:
1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. P.C.B. mounted with 0.5 X 0.5’’(12.7 X 12.7mm) copper pad areas.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
08-Feb-2017 Rev. A
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