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SM4003PL PDF预览

SM4003PL

更新时间: 2024-11-12 12:14:55
品牌 Logo 应用领域
辰达行 - MDD 二极管光电二极管
页数 文件大小 规格书
2页 133K
描述
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER

SM4003PL 数据手册

 浏览型号SM4003PL的Datasheet PDF文件第2页 
SM4001PL THRU SM4007PL  
RFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER  
SU  
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere  
FEATURES  
SOD-123FL  
Cathode Band  
Top View  
Glass passivated device  
Ideal for surface mouted applications  
Low reverse leakage  
Metallurgically bonded construction  
High temperature soldering guaranteed:  
2.8±0.1  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.6±0.25  
MECHANICAL DATA  
Case: JEDEC SOD-123FL molded plastic body over passivated chip  
Terminals: Solderable per MIL-STD-750,  
Method 2026  
3.7±0.2  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.0007 ounce, 0.02 grams  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
4002  
A2  
4003  
A3  
SYMBOLS 4001  
4004  
A4  
4005  
A5  
4006  
A6  
4007  
A7  
UNITS  
A1  
MDD Catalog  
Number  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000 VOLTS  
VOLTS  
50  
35  
50  
VRRM  
VRMS  
VDC  
700  
100  
1000 VOLTS  
Maximum DC blocking voltage  
Maximum average forward rectified current  
at TA=65 C (NOTE 1)  
I(AV)  
1.0  
Amp  
Peak forward surge current  
IFSM  
25.0  
1.1  
8.3ms single half sine-wave superimposed on  
Amps  
Volts  
rated load (JEDEC Method)  
TL=25 C  
VF  
IR  
Maximum instantaneous forward voltage at 1.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
10.0  
50.0  
µ
A
TA=125 C  
Typical junction capacitance (NOTE 2)  
Typical thermal resistance (NOTE 3)  
CJ  
RθJA  
pF  
K/W  
C
4
180  
Operating junction and storage temperature range  
TJ,TSTG  
-55 to +150  
Note:  
1.Averaged over any 20ms period.  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
MDD ELECTRONIC  

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