SM3GZ47

更新时间： 2024-11-14 22:14:11

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网
页数	文件大小	规格书
5页	214K
描述
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

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中文翻译

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数据手册
替代型号

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SM3GZ47 数据手册

SM3GZ47,SM3JZ47

TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM3GZ47,SM3JZ47

AC POWER CONTROL APPLICATIONS

Unit: mm

l Repetitive Peak Off−State Voltage : V

= 400, 600V

DRM

l R.M.S ON−State Current

l High Commutating (dv / dt)

l Isolation Voltage

: I

= 3A

T (RMS)

: V

ISOL

= 1500V AC

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

RATING

UNIT

SM3GZ47

SM3JZ47

400

600

Repetitive Peak

DRM

Off−State Voltage

R.M.S On−State Current

T (RMS)

(Full Sine Waveform Tc = 110°C)

30 (50Hz)

33 (60Hz)

4.5

Peak One Cycle Surge On−State

TSM

Current (Non-Repetitive)

I t Limit Value (t = 1~10ms)

I t

A s

JEDEC

JEITA

―

Critical Rate of Rise of On−State

di / dt

A / µs

Current

(Note 1)

TOSHIBA

Weight: 1.7g

13−10H1A

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Voltage

0.5

G (AV)

Peak Gate Current

Note 1: di / dt test condition

= 0.5×Rated

Junction Temperature

Storage Temperature Range

Isolation Voltage (AC, t = 1min.)

−40~125

1500

°C

DRM

stg

≤ 4.5A

≥ 10µs

≤ 250ns

ISOL

= I ×2.0

2001-07-13

12 3 4 5

中文翻译

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SM3GZ47 替代型号

型号	品牌	替代类型	描述	数据表
Q4025R5	LITTELFUSE	功能相似	Triacs (0.8 A to 35 A)
Q4025R6	LITTELFUSE	功能相似	Alternistor Triacs (6 A to 40 A)
Q4004LT	LITTELFUSE	功能相似	Quadrac - Internally Triggered Triacs (4 A to 15 A)

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