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SM2403T-6.6 PDF预览

SM2403T-6.6

更新时间: 2024-02-07 03:01:33
品牌 Logo 应用领域
铁电 - RAMTRON 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 188K
描述
Cache DRAM, 8MX8, 4.5ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

SM2403T-6.6 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.75
访问模式:FOUR BANK PAGE BURST最长访问时间:4.5 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G44
长度:22.22 mm内存密度:67108864 bit
内存集成电路类型:CACHE DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:44字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

SM2403T-6.6 数据手册

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16Mbit Enhanced SDRAM Family  
4Mx4, 2Mx8, 1Mx16  
Product Brief  
Features  
·
100% Pin, Function, and Timing Compatible with  
JEDEC standard SDRAM  
·
·
·
·
·
·
Hidden Auto-Refresh without closing Read Pages  
Low Power Suspend, Self-Refresh, and Power Down Modes  
Optional No Write Transfer Mode  
·
·
·
·
·
·
Integrated 8Kbit SRAM Row Cache  
Synchronous Operation up to 150MHz  
24ns Row Access Latency, 11ns Column Latency  
Early Auto-Precharge  
Programmable Burst Length (1, 2, 4, 8, full page)  
Programmable CAS Latency (1, 2, 3)  
Single 3.3V Power Supply  
Flexible VDDQ Supports LVTTL and 2.5V I/O  
Packages: 44-pin TSOP-II (400 mils wide)  
50-pin TSOP-II (400 mils wide)  
The two bank architecture combines 24ns DRAM arrays  
with a 11ns SRAM row cache per bank. The ESDRAM is a  
superset technology of JEDEC standard SDRAM. Its two  
key functional features include early auto-precharge (close  
DRAM page while burst reads are performed) and an  
optional No Write Transfer mode. The ESDRAM is capable  
of maintaining two open read pages and two open write  
pages simultaneously via the No Write Transfer mode.  
Description  
The Enhanced Memory Systems 16Mb enhanced  
SDRAM (ESDRAM) family combines raw speed with  
innovative architecture to optimize system price-  
performance in high performance computer and  
embedded control systems.  
The ESDRAM is pin compatible with JEDEC standard  
SDRAM. It is also function and timing compatible with  
JEDEC standard SDRAM.  
FUNCTIONAL BLOCK DIAGRAM  
BANK A  
BANK B  
8Mbit  
A(11:0)  
8Mbit  
SENSE AMPLIFIERS  
SENSE AMPLIFIERS  
SRAM ROW CACHE  
COLUMN DECODER  
SRAM ROW CACHE  
COLUMN DECODER  
CLK  
CKE  
/CS  
COMMAND  
DECODER  
and  
/RAS  
Product  
4Mx4  
Cache Size  
1Kx4  
DQ  
/CAS  
/WE  
TIMING  
GENERATOR  
DQM(1:0)  
2Mx8  
512x8  
1Mx16  
256x16  
The information contained herein is subject to change without notice.  
Enhanced reserves the right to change or discontinue this product  
without notice.  
Ó 1999 Enhanced Memory Systems Inc. 1850 Ramtron Drive, Colorado Springs, CO 80921  
Telephone (800) 545-DRAM, Fax (719) 488-9095, Web http://www.edram.com Rev. 2.4  

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