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SM15T200CA-E3/57T PDF预览

SM15T200CA-E3/57T

更新时间： 2024-11-05 22:54:11
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 103K
描述
TVS DIODE 171V 274V DO214AB

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中文翻译

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SM15T200CA-E3/57T 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AB
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：2.07
其他特性：EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY最大击穿电压：210 V
最小击穿电压：190 V击穿电压标称值：200 V
最大钳位电压：274 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ABJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：BIDIRECTIONAL
最大功率耗散：6.5 W认证状态：Not Qualified
最大重复峰值反向电压：171 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

SM15T200CA-E3/57T 数据手册

 浏览型号SM15T200CA-E3/57T的Datasheet PDF文件第2页浏览型号SM15T200CA-E3/57T的Datasheet PDF文件第3页浏览型号SM15T200CA-E3/57T的Datasheet PDF文件第4页浏览型号SM15T200CA-E3/57T的Datasheet PDF文件第5页 
SM15T Series  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in unidirectional and bidirectional  
• 1500 W peak pulse power capability with a  
10/1000 μs waveform  
Available  
SMC (DO-214AB)  
• Excellent clamping capability  
Cathode  
Anode  
• Low inductance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
(unidirectional)  
(bidirectional)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3D Models  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
VWM  
5.8 V to 188 V  
V
BR unidirectional  
6.8 V to 220 V  
6.8 V to 220 V  
1500 W  
V
BR bidirectional  
PPPM  
PD  
MECHANICAL DATA  
6.5 W  
Case: SMC (DO-214AB)  
IFSM (uni-directional only)  
200 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant and commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
TJ max.  
150 °C  
Polarity  
Unidirectional, bidirectional  
SMC (DO-214AB)  
Package  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
DEVICES FOR BIDIRECTION APPLICATIONS  
For bidirectional devices use CA suffix (e.g. SM15T12CA).  
Electrical characteristics apply in both directions.  
(“_X” denotes revision code e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
APPLICATION NOTES  
A 1500 W (SMC) device is normally selected when the threat  
of transients is from lightning induced transients, conducted  
via external leads or I/O lines. It is also used to protect  
against switching transients induced by large coils or  
industrial motors. Source impedance at component level in  
a system is usually high enough to limit the current within the  
peak pulse current (IPP) rating of this series. In an overstress  
condition, the failure mode is a short circuit.  
Polarity: for unidirectional types the band denotes cathode  
end, no marking on bidirectional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
1500  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
6.5  
A
PD  
W
IFSM  
200  
A
TJ, TSTG  
-65 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal  
(2)  
Revision: 19-Apr-2021  
Document Number: 88380  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

中文翻译

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SM15T200CA-E3/57T 替代型号

型号 品牌 替代类型 描述 数据表
SM15T200CAHE3/9AT VISHAY

完全替代

 DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2
SM15T200CAHE3/57T VISHAY

类似代替

 DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2

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