5秒后页面跳转
SM15T100A-E3/9AT PDF预览

SM15T100A-E3/9AT

更新时间: 2024-11-14 14:24:35
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 104K
描述
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN, Transient Suppressor

SM15T100A-E3/9AT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.56
Is Samacsys:N其他特性:EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY
最大击穿电压:105 V最小击穿电压:95 V
击穿电压标称值:100 V最大钳位电压:137 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:6.5 W
认证状态:Not Qualified最大重复峰值反向电压:85.5 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SM15T100A-E3/9AT 数据手册

 浏览型号SM15T100A-E3/9AT的Datasheet PDF文件第2页浏览型号SM15T100A-E3/9AT的Datasheet PDF文件第3页浏览型号SM15T100A-E3/9AT的Datasheet PDF文件第4页浏览型号SM15T100A-E3/9AT的Datasheet PDF文件第5页 
SM15T Series  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 1500 W peak pulse power capability with a  
10/1000 μs waveform  
• Excellent clamping capability  
DO-214AB (SMC J-Bend)  
• Low inductance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRIMARY CHARACTERISTICS  
VWM  
5.8 V to 188 V  
6.8 V to 220 V  
6.8 V to 220 V  
1500 W  
• AEC-Q101 qualified  
VBR uni-directional  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
V
BR bi-directional  
PPPM  
PD  
6.5 W  
TYPICAL APPLICATIONS  
I
FSM (uni-directional only)  
200 A  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
TJ max.  
150 °C  
Polarity  
Uni-directional, bi-directional  
DO-214AB (SMC J-Bend)  
Package  
MECHANICAL DATA  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SM15T12CA).  
Electrical characteristics apply in both directions.  
Case: DO-214AB (SMC J-Bend)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant and industrial grade  
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified  
APPLICATION NOTES  
A 1500 W (SMC) device is normally selected when the threat  
of transients is from lightning induced transients, conducted  
via external leads or I/O lines. It is also used to protect  
against switching transients induced by large coils or  
industrial motors. Source impedance at component level in  
a system is usually high enough to limit the current within the  
peak pulse current (IPP) rating of this series. In an overstress  
condition, the failure mode is a short circuit.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
1500  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
Notes  
IPPM  
See next table  
6.5  
A
PD  
W
IFSM  
200  
A
TJ, TSTG  
-65 to +150  
°C  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal  
(2)  
Revision: 06-Feb-15  
Document Number: 88380  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SM15T100A-E3/9AT 替代型号

型号 品牌 替代类型 描述 数据表
SM15T100AHE3/9AT VISHAY

完全替代

TVS DIODE 85.5V 137V DO214AB
SM15T100AHE3/57T VISHAY

完全替代

TVS DIODE 85.5V 137V DO214AB

与SM15T100A-E3/9AT相关器件

型号 品牌 获取价格 描述 数据表
SM15T100AHE3/57T VISHAY

获取价格

TVS DIODE 85.5V 137V DO214AB
SM15T100AHE3/9AT VISHAY

获取价格

TVS DIODE 85.5V 137V DO214AB
SM15T100AHE3_A/H VISHAY

获取价格

Trans Voltage Suppressor Diode,
SM15T100AHE3_A/I VISHAY

获取价格

Trans Voltage Suppressor Diode,
SM15T100AHM3_A/H VISHAY

获取价格

Trans Voltage Suppressor Diode,
SM15T100AHM3_A/I VISHAY

获取价格

Trans Voltage Suppressor Diode,
SM15T100C STMICROELECTRONICS

获取价格

UNI-AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS
SM15T100C/9 VISHAY

获取价格

Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-214AB, PLASTI
SM15T100CA SUNMATE

获取价格

1500W patch TVS transient suppression diode SMC 100V
SM15T100CA MDE

获取价格

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR