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SM05T1G

更新时间： 2024-11-11 17:14:55
品牌 Logo 应用领域
友台半导体 - UMW 脉冲
页数 文件大小 规格书
5页 311K
描述
反向截止电压（Vrwm）:5V;极性/通道数（Channel）:2-Line，Bidirectional;击穿电压（VBR):6.2V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):9.8V;电容（Cj）:225pF

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SM05T1G 数据手册

 浏览型号SM05T1G的Datasheet PDF文件第2页浏览型号SM05T1G的Datasheet PDF文件第3页浏览型号SM05T1G的Datasheet PDF文件第4页浏览型号SM05T1G的Datasheet PDF文件第5页 
R
UMW  
SMxxT1G  
These dual monolithic silicon surge protection diodes are designed  
for applications requiring transient overvoltage protection capability.  
They are intended for use in voltage and ESD sensitive equipment such  
as computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
anode design protects two separate lines using only one package. These  
devices are ideal for situations where board space is at a premium.  
1
2
3
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
Specification Features:  
• SOT−23 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
• Working Peak Reverse Voltage Range − 5.0 V to 36 V  
• Peak Power − 300 Watt (8/20 ms)  
• Low Leakage − 1.0mA  
• Flammability Rating UL 94 V−0  
• These are Pb−Free Devices  
Mechanical Characteristics:  
CASE: Void-Free, Transfer-Molded, Thermosetting Plastic Case  
FINISH: Corrosion Resistant Finish, Easily Solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
W
Peak Power Dissipation @ 20 ms (Note 1) @ T ≤ 25°C  
P
pk  
300  
L
IEC 61000−4−2 (ESD)  
Air  
Contact  
kV  
15  
26  
IEC 61000−4−4 (EFT)  
40  
12  
A
A
IEC 61000−4−5 (Lightning)  
Total Power Dissipation on FR−5 Board (Note 2) @ T = 25°C  
°P °  
225  
1.8  
556  
°mW°  
mW/°C  
°C/W  
A
D
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Total Power Dissipation on Alumina Substrate (Note 3) @ T = 25°C  
°P  
300  
2.4  
417  
°mW  
mW/°C  
°C/W  
A
D
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Junction and Storage Temperature Range  
T , T  
− 55 to +150  
260  
°C  
°C  
J
stg  
Lead Solder Temperature − Maximum (10 Second Duration)  
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Non−repetitive current pulse per Figure 3  
2. FR−5 = 1.0 x 0.75 x 0.62 in.  
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina  
NOTE: Other voltages may be available upon request  
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  
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