Datasheet > SLW9N90CZ

SLW9N90CZ

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	278K
描述
TO-3P

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中文翻译

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SLW9N90CZ 数据手册

SLW9N90CZ

900V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 9A, 900V, R_DS(on)= 1.05Ω@V_GS= 10 V

- Low gate charge ( typical 70 nC)

- High ruggedness

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

- ESD Improved capability

TO-3P

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLW9N90CZ

Units

Drain-Source Voltage

900

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

5.4

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

900

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

dv/dt

4.5

280

P_D

- Derate above 25℃

2.22

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

TYP

MAX

0.45

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

R_θJC

0.24

R_θJS

R_θJA

Maple Semiconductor CO., LTD

http://www.maplesemi.com

Rev. 00 March . 2013

12 3 4 5 6

中文翻译

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