Datasheet > SLV123TK

SLV123TK

更新时间： 2024-10-30 18:09:27

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	538K
描述
SOT-23

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中文翻译

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数据手册

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SLV123TK 数据手册

SLV123TK

100V N -Channel MOSFET

Features

General Description

- N-Channel:100V 0.17A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ= 4Ω@V_GS= 10V

R_DS(on)Typ= 6 Ω@V_GS= 4.5V

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

advanced TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- 100% avalanche tested

- Improved dv/dt capability

Application

 PWM Application

 Load Switch

 Power Management

SOT-23

D-PAK

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLV123TK

Units

Drain-Source Voltage

100

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

0.17

0.11

0.68

I_D

(Note 1)

I_DM

V_GSS

P_D

Drain Current

Gate-Source Voltage

Power Dissipation (T_C= 25℃)

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

357

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Apr. 2020

12 3 4 5 6 7 8

中文翻译

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