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SLV2302A PDF预览

SLV2302A

更新时间: 2024-11-19 18:10:03
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
8页 683K
描述
SOT-23

SLV2302A 数据手册

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SLV2302A  
20V N -Channel MOSFET  
Features  
General Description  
- N-Channel: 20V 4.3A  
This Power MOSFET is produced using Msemitek‘s  
RDS(on)Typ=19mΩ@VGS = 4.5 V  
RDS(on))Typ= 26mΩ@VGS = 2.5V  
- Very Low On-resistance RDS(ON)  
- Low Crss  
- Fast switching  
advanced TRENCH technology.  
This advanced technology has been especially tailored to  
minimize conduction loss, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode.  
- Improved dv/dt capability  
Application  
PWM Application  
Load Switch  
Power Management  
D
G
SOT-23  
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLV2302A  
Units  
Drain-Source Voltage  
20  
4.3  
V
A
VDSS  
Drain Current  
- Continuous (TC = 25)  
ID  
- Continuous (TC = 70)  
3.4  
A
(Note 1)  
IDM  
VGSS  
PD  
Drain Current  
- Pulsed  
12.9  
A
Gate-Source Voltage  
10  
±
V
Power Dissipation (TC = 25)  
1.38  
90.5  
W
/W  
R θJA  
TJ, TSTG  
Thermal Resistance, Junction-to-Ambient  
Operating and Storage Temperature Range  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
TL  
300  
* Drain current limited by maximum junction temperature.  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev1.0 Jul. 2021  

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