Datasheet > SLP3205T

SLP3205T

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	811K
描述
TO-220

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中文翻译

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SLP3205T 数据手册

LEAD FREE

RoHS

SLB3205T/SLP3205T

60V N -Channel MOSFET

Features

General Description

- N-Channel:60V 120A

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

R_DS(on)Typ= 4.9mΩ@V_GS= 10 V

- Very Low On-resistance RDS(ON)

- LowCrss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

Load Switch

PWM Application

 Power Management

D2-PAK

TO-220C

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLB3205T/SLP3205T

Units

Drain-Source Voltage

120

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

380

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

625

150

P_D

Power Dissipation (T_C= 100℃)

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to ambient

Operating and Storage Temperature Range

R _θJC

R _θJA

℃/W

℃

T_J, T_STG

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Maple semiconductor Co., Ltd

http://www.maplesemi.com

Rev1.0 Apr. 2020

12 3 4 5 6

中文翻译

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