Datasheet > SLP25N10T

SLP25N10T

更新时间： 2024-11-10 18:09:31

品牌	Logo	应用领域
美浦森 - Maplesemi		/
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8页	1173K
描述
TO-220C

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中文翻译

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SLP25N10T 数据手册

SLP25N10T

100V N -Channel MOSFET

Features

General Description

- N-Channel:100V 25A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ= 40mΩ@V_GS= 10 V

R_DS(on)Typ= 45mΩ@V_GS=4.5 V

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

advanced TRENCH technology.

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- 100% avalanche tested

- Improved dv/dt capability

Application

PWM Application

Load Switch

Power Management

TO-220C

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP25N10T

Units

Drain-Source Voltage

100

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

100

V_GSS

Gate-Source Voltage

E_AS

Single Pulsed Avalanche Energy

P_D

R _θJC

Power Dissipation (T_C= 25℃)

2.78

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to ambient

Operating and Storage Temperature Range

℃/W

℃

R _θJA

T_J, T_STG

-55 to +175

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Apr. 2021

12 3 4 5 6 7 8

中文翻译

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