Datasheet > SLP150N06T

SLP150N06T

更新时间： 2024-09-17 18:09:39

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	954K
描述
TO-220C

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SLP150N06T 数据手册

SLP150N06T

60V N-Channel MOSFET

General Description

This Power MOSFET is produced using Msemitek‘s

advanced TRENCH technology.

Features

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- 150A, 60V, R_DS(on)Typ= 3.1mΩ@V_GS= 10 V

- Very Low On-resistance R_DS(ON)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

PWM Application

Load Switch

Power Management

TO-220C

SLP150N06T

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP150N06T

Units

Drain-Source Voltage

150

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

E_AR

Drain Current

- Pulsed

450

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

552

200

V/ns

dv/dt

P_D

Peak Diode Recovery dv/dt

4.5

Power Dissipation (T_C= 25℃)

290

Thermal Resistance, Junction-to-Case

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

0.39

℃/W

℃

R_θJC

T_J, T_STG

-55 to +150

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 2.0 Aug. 2022

12 3 4 5 6 7 8

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