Datasheet > SLN-286

SLN-286

更新时间： 2024-11-09 03:31:43

品牌	Logo	应用领域
STANFORD		放大器
页数	文件大小	规格书
3页	99K
描述
DC-3.5 GHz, 3Volt 50 Ohm LNA MMIC Amplifier

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SLN-286 数据手册

Product Description

SLN-286

Stanford Microdevices’ SLN-286 is a high performance

gallium arsenide heterojunction bipolar transistor MMIC

housed in a low-cost surface mount plastic package. A

Darlington configuration is used for broadband performance

from DC-3.5 GHz.

DC-3.5 GHz, 3Volt

50 Ohm LNA MMIC Amplifier

The SLN-286 needs only 2 DC-Blocking capacitors and a

bias resistor for operation. Noise figure may be optimized by

using 2-element matching at the input to yield <2.0 dB noise

figure.

This 50 Ohm LNA requires only a single supply voltage and

draws only 5mA. For broadband applications, it may be

biased at 4mA with minimal effect on noise figure and gain.

Product Features

•Patented, Reliable GaAs HBT Technology

• Low Noise Figure: 1.7 dB from 0.1 to 1.5 GHz

• High Associated Gain: 27 dB Typ. at 2.0 GHz

The SLN-286 is available in tape and reel at 1000, 3000 and

5000 devices per reel.

• True 50 Ohm MMIC : No External Matching

Required

Noise Figure vs. Frequency

2.5

4 mA

• Low Current Draw : Only 5 mA at 3V

• Low Cost Surface Mount Plastic Package

5 mA

1.5

Applications

0.1

0.5

1.5

2.5

3.5

• AMPS, PCS, DECT, Handsets

• Tri-Band & Broadband Receivers

GHz

Electrical Specifications at Ta = 25C

S y m b o l

P a r a m e te r s : T e s t C o n d itio n s

U n its

M in .

T y p .

M a x .

N F

N o is e F ig u re in 5 0 O h m s :

D C -1 .5 G H z

1 .5 - 3 .5 G H z

d B

1 .7

2 .2

2 .1

5 0 O h m

V d s

3 .0 V, Id s

m A

D C -1 .5 G H z

1 .5 - 3 .5 G H z

2 2

2 5

2 3

5 0 O h m G a in

d B

S _{2 1}

V d s 3 .0 V, Id s

m A

D C -1 .5 G H z

1 .5 - 3 .5 G H z

1 .8 :1

2 .5 :1

5 0 O h m M a tc h (In p u t a n d O u tp u t)

V d s 3 .0 V, Id s m A

V S W R

= 5

N F

N o is e F ig u re in 5 0 O h m s :

D C -1 .5 G H z

1 .5 - 3 .5 G H z

d B

1 .9

2 .4

2 .3

5 0 O h m

V d s

2 .8 V, Id s

m A

D C -1 .5 G H z

1 .5 - 3 .5 G H z

1 9

2 2

2 0

5 0 O h m G a in

d B

S _{2 1}

V d s 2 .8 V, Id s

m A

D C -1 .5 G H z

1 .5 - 3 .5 G H z

1 .4 :1

2 .0 :1

5 0 O h m M a tc h (In p u t a n d O u tp u t)

V d s 2 .8 V, Id s m A

V S W R

= 4

V d = 3 .0 V, Id

V d = 2 .8 V, Id

m A

d B m

-1 2

-1 4

O u tp u t P o w e r a t 1 d B C o m p re s s io n

D C -3 .5 G H z

P _{1 d B}

V d = 3 .0 V, Id

V d = 2 .8 V, Id

m A

+ 3

+ 1

T h ir d O r d e r In te r c e p t P o in t

D C -3 .5 G H z

d B m

IP ₃

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford

Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

4-21

12 3

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