Datasheet > SLF65R380E7

SLF65R380E7

更新时间： 2024-11-22 18:10:03

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	662K
描述
TO-220F

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中文翻译

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数据手册

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SLF65R380E7 数据手册

SLF65R380E7

650V N-Channel

Super-JMOSFET

Features

General Description

This Power MOSFET is produced using Msemitek‘s

Advanced Super-Junction technology.

- 11A, 650V, R_DS(on)max= 380mΩ@V_GS= 10 V

- Low gate charge ( typical 15.5nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

- Improved dv/dt capability

TO-220F

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLF65R380E7

Units

Drain-Source Voltage

650

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

(Note 2)

(Note 1)

Single Pulsed Avalanche Energy

Avalanche Current

483

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

MOSFET dv/dt

6.25

(Note 3)

dv/dt

P_D

V/ns

100

Power Dissipation (T_C= 25℃)

W/℃

℃

- Derate above 25℃

0.22

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLF65R380E7

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

4.5

R_θJS

62.5

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.1 Oct. 2020

12 3 4 5 6 7...9

中文翻译

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