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SLF65R380E7 PDF预览

SLF65R380E7

更新时间: 2024-06-27 12:13:56
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
9页 662K
描述
TO-220F

SLF65R380E7 数据手册

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SLF65R380E7  
650V N-Channel  
Super-JMOSFET  
Features  
General Description  
This Power MOSFET is produced using Msemitek‘s  
Advanced Super-Junction technology.  
- 11A, 650V, RDS(on)max= 380mΩ@VGS = 10 V  
- Low gate charge ( typical 15.5nC)  
- High ruggedness  
- Fast switching  
- 100% avalanche tested  
This advanced technology has been especially tailored to  
minimize conduction loss, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode.  
These devices are well suited for AC/DC power conversion  
in switching mode operation for higher efficiency.  
- Improved dv/dt capability  
D
G
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLF65R380E7  
Units  
V
Drain-Source Voltage  
650  
11  
7
VDSS  
Drain Current  
- Continuous (TC = 25)  
A
ID  
- Continuous (TC = 100)  
A
(Note 1)  
IDM  
VGSS  
EAS  
IAR  
Drain Current  
- Pulsed  
33  
A
Gate-Source Voltage  
30  
±
V
(Note 2)  
(Note 1)  
Single Pulsed Avalanche Energy  
Avalanche Current  
483  
11  
mJ  
A
EAR  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
MOSFET dv/dt  
6.25  
mJ  
(Note 3)  
20  
dv/dt  
PD  
V/ns  
100  
Power Dissipation (TC = 25)  
28  
W
W/℃  
- Derate above 25℃  
0.22  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
300  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
SLF65R380E7  
Units  
/W  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
4.5  
--  
RθJS  
62.5  
RθJA  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev1.1 Oct. 2020  

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