Datasheet > SLF65R950S2

SLF65R950S2

更新时间： 2024-11-22 18:09:15

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美浦森 - Maplesemi		/
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描述
TO-220F

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SLF65R950S2 数据手册

SLF65R950S2

650V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 5A, 650V, R_DS(on)= 950mΩ@V_GS= 10 V

- Low gate charge

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

TO-220F

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLF65R950S2

Units

Drain-Source Voltage

650

5 *

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

3.2*

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

20 *

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

214

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

dv/dt

27.0

0.22

P_D

- Derate above 25℃

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLF65R950S2

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

4.6

R_θJS

62.5

R_θJA

Maple Semiconductor CO., LTD

http://www.maplesemi.com

Rev. 1.0 Apr . 2020

12 3 4 5 6

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