Datasheet > SLD65R700S2

SLD65R700S2

更新时间： 2024-10-03 18:09:47

品牌	Logo	应用领域
美浦森 - Maplesemi		/
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6页	982K
描述
TO-252

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SLD65R700S2 数据手册

SLD65R700S2/SLU65R700S2

650V N-channel MOSFET

General Description

This Power MOSFET is produced using Maple semi‘s

Features

- 7A, 650V, R_DS(on)typ= 0.55Ω@V_GS= 10 V

- Low gate charge ( typical 16nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Advanced Super-Junction technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

LEAD FREE

RoHS

I-PAK

D-PAK

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD65R700S2 SLU65R700S2

Units

Drain-Source Voltage

650

7.0

4.4

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

261

dv/dt

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

P_D

- Derate above 25℃

0.48

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLD65R700S2 SLU65R700S2

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2.08

R_θJS

62.5

R_θJA

Maple Semiconductor CO., LTD

http://www.meipusen.com

Rev1.0 Nov. 2018

12 3 4 5 6

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