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SLD-68HFBG1

更新时间: 2024-10-02 04:21:35
品牌 Logo 应用领域
SILONEX 光电二极管光电二极管
页数 文件大小 规格书
1页 29K
描述
Internal Infrared Rejection Filter Planar Photodiode

SLD-68HFBG1 技术参数

生命周期:TransferredReach Compliance Code:unknown
HTS代码:8541.40.60.50风险等级:5.59
Is Samacsys:NBase Number Matches:1

SLD-68HFBG1 数据手册

  
SLD-68HFBG1  
Internal Infrared Rejection Filter  
Planar Photodiode  
Features  
CATHODE  
(Common to case)  
·
·
·
·
·
·
Fast switching time, Low capacitance  
High responsivity  
Linear response vs irradiance  
IR Blocking Filter  
Hermetic TO-46 case with flat window  
Multiple dark current ranges available  
5.1  
ø 5.3  
0.8  
0.5  
2.5  
4.7  
Description  
45°  
25.4 Min.  
Anode  
This small area planar, passivated silicon  
photodetector is designed to operate in either  
photovoltaic or reverse bias mode. It provides  
excellent linearity in output signal versus irradiance  
(Ee). Low dark current and low capacitance make it  
the ideal detector for fast rise time applications.  
Internal blue-green filter blocks infrared radiation.  
Chip Size = 1.7 mm X 1.7 mm  
Active Area = 2.0 sq.mm.  
Dimensions in mm. (+/- 0.13)  
Directional Sensitivity Characteristics  
50°  
60°  
40°  
30°  
20°  
10°  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Half Angle = 35°  
Absolute Maximum Ratings  
70°  
80°  
90°  
Storage Temperature  
Operating Temperature  
Soldering Temperature (1)  
-20°C to +75°C  
-20°C to +75°C  
260°C  
0.8  
0.4  
100° 1.0  
0.6  
120°  
0
20°  
40°  
60°  
80° 100°  
Electrical Characteristics (TA=25°C unless otherwise noted)  
Symbol Parameter  
Min  
6
Typ  
10  
0.30  
Max  
Units Test Conditions  
mA  
V
ISC  
VOC  
ID  
Short Circuit Current  
Open Circuit Voltage  
Reverse Dark Current:  
VR=0V, Ee=25mW/cm2 (2)  
Ee=25mw/cm2 (2)  
SLD-68HFBG1A  
100  
100  
10  
1
250  
nA  
nA  
nA  
nA  
pA  
pF  
ms  
ms  
%/°C  
V
nm  
nm  
VR=100mV, Ee=0  
VR=5V, Ee=0  
VR=5V, Ee=0  
VR=5V, Ee=0  
VR=5V, Ee=0  
VR=0, Ee=0, f=1MHz  
VR=10V, RL=1kW (3)  
VR=10V, RL=1kW (3)  
(1)  
SLD-68HFBG1B  
SLD-68HFBG1C  
SLD-68HFBG1D  
SLD-68HFBG1E  
CJ  
tR  
tF  
TCI  
VBR  
l P  
Junction Capacitance  
40  
1.0  
1.5  
Rise Time  
Fall Time  
Temp. Coef., ISC  
+0.2  
Reverse Breakdown Voltage  
Maximum Sensitivity Wavelength  
Sensitivity Spectral Range  
Acceptance Half Angle  
50  
IR=100mA  
550  
35  
400  
700  
l R  
q1/2  
deg (off center-line)  
Specifications subject to change without notice  
Notes: (1) >2 mm from case for <5 sec.  
(2) Ee = light source @ 2854 °K  
102539 REV 2  
(3) Ee = light source @ l = 580 nm  
5200 St. Patrick St., Montreal  
Que., H4E 4N9, Canada  
Tel: 514-768-8000  
The Old Railway, Princes Street  
Ulverston, Cumbria, LA12 7NQ, UK  
Tel: 01 229 581 551  
Fax: 514-768-8889  
Fax: 01 229 581 554  
QF-84  

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