Datasheet > SL32-BL

SL32-BL

更新时间： 2024-11-20 12:23:55

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
4页	509K
描述
3.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SMB-L PACKAGE

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SL32-BL 数据手册

WILLAS

SL32-BL

SL34-BL

3.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V

SMB-L PACKAGE

Features

Package outline

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

SMB-L

• Low profile surface mounted application in order to

optimize board space.

.213(5.40)

.197(5.00)

• Low power loss, high efficiency.

.016(0.40)Typ.

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

.142(3.60)

.126(3.20)

• Silicon epitaxial planar chip, metal silicon junction.

Moisture Sensitivity Level 1

•

Mechanical data

.012(0.30)Typ.

.040(1.00) Typ.

.075(1.90)

.067(1.70)

• Epoxy:UL94-V0 rated flame retardant

• Case : Molded plastic,

SMB-L

.040(1.00) Typ.

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026

Dimensions in inches and (millimeters)

• Polarity : Indicated by cathode band

• Mounting Position : Any

Dimensions in inches and (millimeters)

• Weight : Approximated 0.09 gram

Maximum ratings and Electrical Characteristics (AT T_A=25^oC unless otherwise noted)

MAX.

UNIT

MIN.

TYP.

PARAMETER

CONDITIONS

Symbol

I_O

3.0

Forward rectified current

See Fig.2

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

I_FSM

Forward surge current

V_R= V_RRMT_J= 25^OC

I_R

1.0

Reverse current

C_J

^OC

Diode junction capacitance

Storage temperature

300

f=1MHz and applied 4V DC reverse voltage

+150

-55

T_STG

*1 Repetitive peak reverse voltage

*2 RMS voltage

Operating

V_RRM

V_R

V_RMS

V_F

SYMBOLS

temperature

T_J, (^OC)

(V)

SL32-BL

SL34-BL

0.38

0.40

*3 Continuous reverse voltage

*4 Maximum forward voltage@I_F=3.0A

-55 to +100

2013-01

WILLAS ELECTRONIC CORP.

12 3 4

中文翻译

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