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SL32-L PDF预览

SL32-L

更新时间: 2024-11-17 11:59:31
品牌 Logo 应用领域
威伦 - WILLAS /
页数 文件大小 规格书
4页 488K
描述
3.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SMC-L PACKAGE

SL32-L 数据手册

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WILLAS  
3.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V  
SMC-L PACKAGE  
SL32-L  
SL34-L  
Package outline  
Features  
SMC-L  
Batch process design, excellent power dissipation offers  
better reverse leakage current and thermal resistance.  
Low profile surface mounted application in order to  
0.272(6.9)  
0.248(6.3)  
optimize board space.  
0.012(0.3) Typ.  
Low power loss, high efficiency.  
High current capability, low forward voltage drop.  
High surge capability.  
0.189(4.8)  
0.165(4.2)  
Guardring for overvoltage protection.  
Ultra high-speed switching.  
Silicon epitaxial planar chip, metal silicon junction.  
Moisture Sensitivity Level 1  
0.098(2.5)  
0.075(1.9)  
Mechanical data  
Epoxy:UL94-V0 rated flame retardant  
Case : Molded plastic, SMC-L  
0.048(1.2) Typ.  
0.048 (1.2) Typ.  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026  
Dimensions in inches and (millimeters)  
Polarity : Indicated by cathode band  
Mounting Position : Any  
Weight : Approximated 0.19 gram  
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)  
MAX.  
UNIT  
A
MIN.  
TYP.  
PARAMETER  
CONDITIONS  
Symbol  
IO  
3.0  
Forward rectified current  
See Fig.2  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
IFSM  
80  
Forward surge current  
A
VR = VRRM TJ = 25OC  
IR  
1.0  
mA  
Reverse current  
CJ  
pF  
OC  
Diode junction capacitance  
Storage temperature  
300  
f=1MHz and applied 4V DC reverse voltage  
+150  
-55  
TSTG  
Operating  
*1  
VRRM  
*3  
VR  
*4  
*2  
VRMS  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
VF  
SYMBOLS  
temperature  
TJ, (OC)  
(V)  
20  
40  
(V)  
(V)  
20  
40  
(V)  
14  
28  
SL32-L  
SL34-L  
0.38  
0.40  
*3 Continuous reverse voltage  
*4 Maximum forward voltage@IF=3.0A  
-55 to +100  
2013-01  
WILLAS ELECTRONIC CORP.  

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