Datasheet > SKT 24,3 Qu ZG bond SG

SKT 24,3 Qu ZG bond SG

更新时间： 2024-11-25 14:53:35

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	151K
描述
Chips

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SKT 24,3 Qu ZG bond SG 数据手册

SKT 24,3 Qu ZG bond SG

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.5 mA

T_j= 25 °C, I_D= 0.5 mA

T_c= 80 °C, T_j= 130 °C, sinus 180°

T_j= 130 °C, 10 ms, sin 180°

V_RRM

V_DRM

I_T(AV)

I_TSM

i²t

1600

400

8200

336200

130

A²s

°C

T_jmax

THYRISTOR

Electrical Characteristics

Symbol Conditions

min.

typ.

max.

Unit

I_T(DC)= 480 A

T_j= 130 °C, I_T= 680 A

T_j= 130 °C

T_j= 25 °C

V_T

V_T(TO)

r_T

I_GT

V_GT

I_GD

V_GD

I_H

1.20

0.85

0.53

150

mΩ

V_RRM= 1600 V

Size: 24,3 mm x 24,3 mm

T_j= 25 °C

1.98

SKT 24,3 Qu ZG bond SG

Features

• high current density due to double

mesa technology

• high surge current

• compatible to thick wire bonding

• compatible to all standard solder

processes

T_j= 115 °C

T_j= 130 °C

T_j= 25 °C

0.25

220

550

T_j= 25 °C

I_L

Dynamic Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j= 130 °C

t_q

150

µs

A/µs

V/µs

Typical Applications*

• conrolled rectifier circuits

• solid state relays

(di/dt)_cr

(dv/dt)_cr

130

1000

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

T_stg

T_solder

-40

130

255

°C

R_th(j-c)

Semipack 3 assembly

0.091

K/W

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

Area total

Anode

24.3 x 24.3

590

mm²

solderable (Ag/Ni)

Gate and

Cathode

bondable (Al)

Wire bond

Package

Al,diameter ≤ 500μm

tray

Chips /

1 tray pack (6 trays)

Package

pcs

SKT

Rev. 1.0 – 22.05.2017

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