Datasheet > SKT18

SKT18

更新时间： 2024-11-27 09:23:59

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	179K
描述
THYRISTOR

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中文翻译

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数据手册

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SKT18 数据手册

SKT 18,2 Qu ZG bond.

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.45 mA

V_RRM

V_DRM

I_T(AV)

I_TSM

i²t

1600

205

T_j= 25 °C, I_D= 0.45 mA

T_c= 80 °C, T_j= 130 °C

T_j= 130 °C, 10 ms, sin 180°

5000

125000

130

A²s

T_jmax

°C

THYRISTOR

Electrical Characteristics

Symbol Conditions

min.

typ.

max.

Unit

I_T(DC)= 250 A

T_j= 130 °C, I_T= 370 A

V_T

1.2

0.85

V_RRM= 1600 V

T_j= 130 °C

T_j= 25 °C

T_j= 115 °C

T_j= 130 °C

T_j= 25 °C

V_T(TO)

r_T

Size: 18,2 mm x 18,2 mm

mΩ

I_GT

V_GT

I_GD

V_GD

I_H

100

1.98

Central gate

SKT 18,2 Qu ZG bond.

0.25

220

550

Features

• high current density due to double

mesa technology

I_L

• high surge current

Dynamic Characteristics

Symbol Conditions

• compatible to thick wire bonding

• compatible to all standard solder

processes

min.

typ.

max.

Unit

T_j= 130 °C

t_q

150

µs

Typical Applications*

• conrolled rectifier circuits

• solid state relays

(di/dt)_cr

(dv/dt)_cr

A/µs

V/µs

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

-40

130

255

°C

T_stg

T_solder

°C

R_th(j-c)

Semipack 2 assembly

0.18

K/W

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

18.2 x 18.2

331.2

mm²

Area total

Anode

solderable (Ag/Ni)

Gate and

Cathode

bondable (Al)

Wire bond

Package

Al,diameter ≤ 500µm

tray

Chips /

Package

pcs

SKT

Rev. 0 – 18.02.2010

中文翻译

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