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SKMD150F11 PDF预览

SKMD150F11

更新时间: 2024-11-18 21:18:47
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
3页 425K
描述
Rectifier Diode, 1 Phase, 2 Element, 140A, 1100V V(RRM), Silicon,

SKMD150F11 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-CUFM-X3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:UL RECOGNIZED应用:FAST SOFT RECOVERY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.2 VJESD-30 代码:R-CUFM-X3
JESD-609代码:e2最大非重复峰值正向电流:2000 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:140 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1100 V
最大反向恢复时间:0.18 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Silver (Sn/Ag)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SKMD150F11 数据手册

 浏览型号SKMD150F11的Datasheet PDF文件第2页浏览型号SKMD150F11的Datasheet PDF文件第3页 
SEMIPACK® 2  
Fast Diode1) Modules  
VRSM  
VRRM  
IFRMS (maximum values for continuous operation)  
220 A  
IFAV (sin. 180; Tcase = 85 °C; 50 Hz)  
V
117 A  
SKKD 150 F  
SKMD 150 F  
SKND 150 F  
1100  
1200  
SKKD 150 F 11  
SKKD 150 F 12  
SKMD 150 F 11  
SKMD 150 F 12  
SKND 150 F 11  
SKND 150 F 12  
SKKD 150 F  
SKMD 150 F  
Symbol Conditions  
Units  
SKND 150 F  
IFAV  
IFSM  
sin. 180; Tcase = 65 °C  
140  
A
Tvj = 25 °C; 10 ms  
Tvj = 150 °C; 10 ms  
2 000  
1 800  
A
A
i2t  
Tvj = 25 °C; 8,3 ... 10 ms  
Tvj = 150 °C; 8,3 ... 10 ms  
20 000  
16 200  
A2 s  
A2 s  
IRM  
Tvj = 25 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 150 °C  
Tvj = 25 °C; VR = VRRM  
Tvj = 150 °C; VR = VRRM  
IF = 150 A  
di/dt = 500 A/µs  
VR = 600 V  
40  
70  
typ. 180  
A
A
ns  
µC  
mA  
mA  
trr  
Qrr  
IR  
35  
1
40  
SKKD  
VF  
Tvj = 25 °C; IF = 150 A  
Tvj = 150 °C; IF = 150 A  
2,2  
2,0  
V
V
SKMD  
SKND  
V(TO)  
rT  
Tvj = 150 °C  
Tvj = 150 °C  
1,2  
5,5  
V
mΩ  
Features  
Soft recovery  
Very short recovery times  
Low switching losses  
Up to 1200 V peak inverse  
voltage  
Rthjc  
Rthch  
Tvj  
per diode / per module  
per diode / per module  
0,2 / 0,1  
0,1 / 0,05  
°C/W  
°C/W  
°C  
– 40 ... +150  
– 40 ... +150  
Tstg  
°C  
Heat transfer through ceramic  
isolated metal baseplate  
SKKD half bridge connection  
centre tap connections:  
SKMD common cathode  
SKND common anode  
UL recognized, file no. E63 532  
Visol  
M1  
a. c. 50 Hz; r.m.s; 1 min  
4000  
V
to heatsink  
SI units  
5 ± 15 %  
44 ± 15 %  
5 ± 15 %  
Nm  
lb. in  
Nm  
US units  
SI units  
US units  
M2  
w
for terminals  
44 ± 15 %  
lb. in  
approx.  
250  
g
Typical Applications  
Self-commutated inverters  
DC choppers  
AC motor speed control  
Inductive heating  
Uninterruptible power supplies  
Electronic welders  
General power switching  
applications  
SKKD 150 F  
SKMD 150 F  
SKND 150 F  
A 53  
A 51  
A 52  
Case  
page B 2 – 28  
1) CAL (controlled axial lifetime) technology, patent No. DE 43 10 44  
© by SEMIKRON  
0898  
B 2 – 29  

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