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SKM200GB12E4_0906 PDF预览

SKM200GB12E4_0906

更新时间: 2024-11-25 12:20:19
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赛米控丹佛斯 - SEMIKRON 双极性晶体管
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描述
IGBT4 Modules

SKM200GB12E4_0906 数据手册

 浏览型号SKM200GB12E4_0906的Datasheet PDF文件第2页浏览型号SKM200GB12E4_0906的Datasheet PDF文件第3页浏览型号SKM200GB12E4_0906的Datasheet PDF文件第4页浏览型号SKM200GB12E4_0906的Datasheet PDF文件第5页 
SKM200GB12E4  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
1200  
314  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
IC  
Tj = 175 °C  
242  
ICnom  
200  
ICRM  
ICRM = 3xICnom  
600  
VGES  
-20 ... 20  
SEMITRANS®3  
VCC = 800 V  
VGE 15 V  
VCES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
IGBT4 Modules  
SKM200GB12E4  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
229  
172  
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
200  
A
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
600  
A
Features  
990  
A
• IGBT4 = 4. Generation (Trench)IGBT  
• VCEsat with positive temperature  
coefficient  
• High short circuit capability, self  
limiting to 6 x ICNOM  
-40 ... 175  
°C  
Module  
It(RMS)  
Tstg  
500  
-40 ... 125  
4000  
A
°C  
V
• Soft switching 4. Generation CAL  
diode (CAL4)  
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications  
• AC inverter drives  
• UPS  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• Electronic welders at fsw up to 20 kHz  
IC = 200 A  
VCE(sat)  
Tj = 25 °C  
1.8  
2.2  
2.05  
2.4  
V
V
Remarks  
• Case temperature limited to  
Tc = 125°C max, recomm.  
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.8  
0.7  
5.0  
7.5  
5.8  
0.1  
0.9  
0.8  
5.8  
8.0  
6.5  
0.3  
V
V
T
op = -40 ... +150°C, product  
rel. results valid for Tj = 150°  
mΩ  
mΩ  
V
VGE = 15 V  
VGE(th)  
ICES  
VGE=VCE, IC = 7.6 mA  
Tj = 25 °C  
V
5
mA  
mA  
nF  
nF  
nF  
nC  
VGE = 0 V  
CE = 1200 V  
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
12.3  
0.81  
0.69  
1130  
3.8  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
td(on)  
tr  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
204  
40  
ns  
VCC = 600 V  
IC = 200 A  
ns  
V
GE = ±15 V  
Eon  
td(off)  
tf  
21  
mJ  
ns  
R
R
G on = 1 Ω  
G off = 1 Ω  
490  
107  
27  
ns  
di/dton = 5500 A/µs  
di/dtoff = 2300 A/µs  
Eoff  
Rth(j-c)  
mJ  
K/W  
per IGBT  
0.14  
GB  
© by SEMIKRON  
Rev. 2 – 16.06.2009  
1

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