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SK1035 PDF预览

SK1035

更新时间: 2024-02-28 18:57:06
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THINKISEMI /
页数 文件大小 规格书
2页 731K
描述
10.0 Ampere Surface Mount Round Lead Schottky Barrier Rectifier Diodes

SK1035 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.46应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
湿度敏感等级:1最大非重复峰值正向电流:250 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:35 V最大反向电流:1000 µA
表面贴装:YES技术:SCHOTTKY
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SK1035 数据手册

 浏览型号SK1035的Datasheet PDF文件第2页 
SK1035 thru SK1020  
SK1035 thru SK1020  
Pb Free Plating Product  
10.0 Ampere Surface Mount Round Lead Schottky Barrier Rectifier Diodes  
Unit:inch(millimeter)  
FEATURE  
OUTLINE  
Standard MBR matured technology with high reliablity  
H
The plastic package carries Underwriters Laboratory  
Cathode Band  
Flammability Classification 94V-0  
For surface mounted applications  
Low reverse leakage  
J
Built-in strain relief,ideal for automated placement  
High forward surge current capability  
High temperature soldering guaranteed:  
250 C/10 seconds at terminals  
A
C
E
D
MECHANICAL DATA  
B
F
Case: HSMC/SMC-W Package  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
G
DIMENSIONS  
Polarity: Color band denotes cathode band  
Mounting Position: Any  
INCHES  
MIN  
MM  
DIM  
A
B
C
D
E
MAX  
.214  
0
0.203  
0.005  
0.02  
0.056  
0 .179  
0.322  
0.243  
0.240  
MIN  
5.08  
4.70  
0.05  
---  
1.20  
4.27  
7.85  
6.08  
5.95  
MAX  
5.43  
5.30  
0.13  
0.51  
1.42  
4.55  
8.18  
6.18  
6.10  
NOTE  
.200  
0
Weight: 0.22 gram approximately  
.177  
0
0.002  
---  
0.047  
0.168  
0.309  
0.239  
0.234  
APPLICATION  
F
G
H
J
LED SMPS/Industrial power supply  
HID ballast stabilizer  
Telecommunication SMPS/LED street lamp  
HSMC/SMC-W  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
SK  
SK  
SK  
SK  
106  
60  
SK  
109  
90  
SK  
1010  
100  
70  
SK  
SK  
PARAMETER  
SYMBOL  
UNIT  
1035 1045 105  
1015 1020  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
35  
24  
35  
45  
31  
45  
50  
35  
50  
150  
105  
150  
200  
140  
200  
V
V
V
A
42  
63  
Maximum DC blocking voltage  
60  
90  
100  
Maximum average forward rectified current  
IF(AV)  
10  
20  
Peak repetitive forward current  
(Rated VR, Square Wave, 20KHz)  
IFRM  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
VF  
150  
A
A
Peak repetitive reverse surge current (Note 1)  
1.0  
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF=10A, TJ=25  
0.70  
0.57  
0.80  
0.85  
0.71  
1.05  
-
V
IF=10A, TJ=125℃  
0.70  
0.1  
Maximum reverse current @ rated VR TJ=25  
TJ=125 ℃  
IR  
mA  
15  
10  
6
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
17  
dV/dt  
RθJC  
TJ  
V/μs  
oC/W  
oC  
oC  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +175  
TSTG  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Page 1/2  
http://www.thinkisemi.com/  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  

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