SK1035 thru SK1020
Pb
SK1035 thru SK1020
Pb Free Plating Product
10.0 Ampere Surface Mount Round Lead Schottky Barrier Rectifier Diodes
Unit:inch(millimeter)
FEATURE
OUTLINE
Standard MBR matured technology with high reliablity
H
The plastic package carries Underwriters Laboratory
Cathode Band
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
J
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
A
C
E
D
MECHANICAL DATA
B
F
Case: HSMC/SMC-W Package
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
G
DIMENSIONS
Polarity: Color band denotes cathode band
Mounting Position: Any
INCHES
MIN
MM
DIM
A
B
C
D
E
MAX
.214
0
0.203
0.005
0.02
0.056
0 .179
0.322
0.243
0.240
MIN
5.08
4.70
0.05
---
1.20
4.27
7.85
6.08
5.95
MAX
5.43
5.30
0.13
0.51
1.42
4.55
8.18
6.18
6.10
NOTE
.200
0
Weight: 0.22 gram approximately
.177
0
0.002
---
0.047
0.168
0.309
0.239
0.234
APPLICATION
F
G
H
J
LED SMPS/Industrial power supply
HID ballast stabilizer
Telecommunication SMPS/LED street lamp
HSMC/SMC-W
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
SK
SK
SK
SK
106
60
SK
109
90
SK
1010
100
70
SK
SK
PARAMETER
SYMBOL
UNIT
1035 1045 105
1015 1020
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
35
24
35
45
31
45
50
35
50
150
105
150
200
140
200
V
V
V
A
42
63
Maximum DC blocking voltage
60
90
100
Maximum average forward rectified current
IF(AV)
10
20
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
VF
150
A
A
Peak repetitive reverse surge current (Note 1)
1.0
0.5
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25℃
0.70
0.57
0.80
0.85
0.71
1.05
-
V
IF=10A, TJ=125℃
0.70
0.1
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
IR
mA
15
10
6
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
17
dV/dt
RθJC
TJ
V/μs
oC/W
oC
oC
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +175
TSTG
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Page 1/2
http://www.thinkisemi.com/
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.