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SJ5811-AG PDF预览

SJ5811-AG

更新时间: 2024-11-12 07:58:59
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
4页 443K
描述
Rectifier Diode, 1 Element, 6A, 150V V(RRM),

SJ5811-AG 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.875 V
最大非重复峰值正向电流:125 A元件数量:1
最高工作温度:175 °C最大输出电流:6 A
最大重复峰值反向电压:150 V最大反向恢复时间:0.03 µs
子类别:Rectifier Diodes表面贴装:NO
Base Number Matches:1

SJ5811-AG 数据手册

 浏览型号SJ5811-AG的Datasheet PDF文件第2页浏览型号SJ5811-AG的Datasheet PDF文件第3页浏览型号SJ5811-AG的Datasheet PDF文件第4页 
1N5807/US, 1N5809/US, 1N5811/US  
SENSITRON  
___  
ULTRAFAST RECOVERY  
RECTIFIERS  
______________________________________________________________________________________  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 127, REV. H.5  
AV AI L AB L E AS  
1N, JAN, JANTX, JANTXV  
JANS  
JAN EQUIVALENT*  
SJ*, SX*, SV*, SS*  
Ultrafast Recovery Rectifiers  
Qualified per MIL-PRF-19500/477  
DESCRIPTION:  
This voidless hermetically sealed ultrafast recovery rectifier diode series is military qualified per  
Mil-PRF-19500/477 and is targeted for commerical and military aircraft, military vehicles,  
shipboard markets, space and all other high reliability applications.  
FEATURES / BENEFITS:  
MAXIMUM RATINGS  
Hermetic, non-cavity glass package  
Category I Metallurgically bonded  
All devices are 100% hot solder dipped  
JAN/ JANTX/JANTXV available per  
MIL-PRF-19500/477  
Operating and Storage Temperature: -65oC to  
+175oC  
Thermal Resistance: 22 oC (junction to lead)  
Thermal Resistance: 6.5 oC (junction to endcap)  
Forward surge current:125A @ 8.3 ms half-sine  
“JANS Plus” removes atypical/out of family VF  
ELECTRICAL CHARACTERISTICS  
TYPE  
NUMBER  
WORKING  
PEAK  
REVERSE  
VOLTAGE  
AVG  
MAXIMUM  
REVERSE  
CURRENT  
@ PIV  
MAX. PEAK  
FORWARD  
VOLTAGE  
(PULSED)  
VF @ 1A  
MAXIMUM  
SURGE  
MAXIMUM  
REVERSE  
RECTIFIED  
CURRENT1  
CURRENT2 RECOVERY  
IFSM  
TIME3  
Trr  
Amps  
Amps  
Volts  
50  
100  
150  
V
Amps  
125  
nsec  
55C  
25C  
125C  
1N5807/US  
1N5809/US  
1N5811/US  
6.0  
5
525  
.875  
30  
Note 1: TEC = TL at L=0 or Tend tab f or US suffix devices. Derate at 60mA/C for TL above 75C.  
Note 2: Io = 3A, 8.3ms surge  
Note 3: IF=1A, IRM=1A, IR(REC) =.10A  
*Sensitron space equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting  
from wafer fabrication through assembly and testing using our internal specification.  
©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com  

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