Datasheet > SiSS70DN

SiSS70DN

更新时间： 2023-12-06 20:03:57

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	253K
描述
N-Channel 125 V (D-S) MOSFET

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中文翻译

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SiSS70DN 数据手册

SiSS70DN

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

100

10000

1000

100

3.6

3.2

2.8

2.4

2.0

10000

I_D= 250 μA

1000

100

T_J= 150 °C

T_J= 25 °C

0.1

0.01

0.3

0.6

0.9

1.2

-50 -25

75 100 125 150

V_SD- Source-to-Drain Voltage (V)

2nd line

T_J- Temperature (°C)

2nd line

Source-Drain Diode Forward Voltage

Threshold Voltage

Axis Title

0.10

0.08

0.06

0.04

0.02

10000

1000

100

500

400

300

200

100

10000

1000

100

T_J= 150 °C

T_J= 25 °C

0.0001 0.001

0.01

Time (s)

2nd line

0.1

V_GS- Gate-to-Source Voltage (V)

2nd line

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Axis Title

I_DMlimited

100

10000

(1)

Limited by R_DS(on)

100 μs

1 ms

1000

100

10 ms

100 ms

10 s, 1 s

0.1

0.01

T_A= 25 °C

Single pulse

BVDSS limited

10 100

0.001

0.1

1000

V_DS- Drain-to-Source Voltage (V)

> minimum V_GSat which R_DS(on)is specified

(1)

Safe Operating Area, Junction-to-Ambient

S18-0494-Rev. A, 07-May-2018

Document Number: 76612

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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