SiSS70DN
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
ID = 250 mA
125
-
-
V
VDS temperature coefficient
-
-
92
-
mV/°C
VGS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
ID = 250 μA
-7.1
-
VDS = VGS, ID = 250 μA
2.5
-
-
4.5
V
IGSS
VDS = 0 V, VGS
=
20 V
-
100
nA
VDS = 125 V, VGS = 0 V
VDS = 125 V, VGS = 0 V, TJ = 70 °C
VDS 10 V, VGS = 10 V
-
-
1
Zero gate voltage drain current
IDSS
μA
-
-
-
15
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
ID(on)
RDS(on)
gfs
20
-
-
0.0298
-
A
S
VGS = 10 V, ID = 8.5 A
0.0248
16
VDS = 15 V, ID = 8.5 A
-
Input capacitance
Ciss
Coss
Crss
-
535
157
8
-
-
Output capacitance
VDS = 62.5 V, VGS = 0 V, f = 1 MHz
VDS = 62.5 V, VGS = 10 V, ID = 8.5 A
-
pF
Reverse transfer capacitance
-
-
-
10.2
8
15.3
12
-
Total gate charge
Qg
-
Gate-source charge
Gate-drain charge
Qgs
Qgd
Qoss
Rg
V
DS = 62.5 V, VGS = 7.5 V, ID = 8.5 A
-
3.2
2.7
26
1.2
20
9
nC
-
-
Output charge
VDS = 62.5 V, VGS = 0 V
f = 1 MHz
-
39
2.4
40
18
60
20
44
24
60
24
Gate resistance
0.24
Turn-on delay time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
Rise time
VDD = 62.5 V, RL = 9.2 , ID 6.8 A,
VGEN = 10 V, Rg = 1
Turn-off delay time
30
10
22
12
30
12
Fall time
ns
Turn-on delay time
Rise time
VDD = 62.5 V, RL = 9.2 , ID 6.8 A,
VGEN = 7.5 V, Rg = 1
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
IS
ISM
VSD
trr
TC = 25 °C
-
-
-
-
-
-
-
-
-
54.8
50
1.2
92
164
-
A
IS = 6.8 A, VGS = 0 V
0.8
46
82
37
9
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Qrr
ta
IF = 6.8 A, di/dt = 100 A/μs,
TJ = 25 °C
ns
tb
-
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0494-Rev. A, 07-May-2018
Document Number: 76612
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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