Datasheet > SIM100D06AV1

SIM100D06AV1

更新时间： 2024-11-18 03:31:59

品牌	Logo	应用领域
SEMIWELL		双极性晶体管
页数	文件大小	规格书
4页	188K
描述
“HALF-BRIDGE” IGBT MODULE

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中文翻译

获取价格

数据手册

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SIM100D06AV1 数据手册

SIM100D06AV1

Preliminary

VCES = 600V

Ic= 100A

“HALF-BRIDGE” IGBT MODULE

Feature

V^CE(ON)typ. = 1.5V

@Ic= 100A

Applications

▪ Motor controls

▪ Smart field stopper +Trench

design technology

▪ VVVF inverters

▪ Inverter-type welding MC over 18KHZ

▪ SMPS, Electrolysis

▪ Low V^CE(sat)

▪ Low Turn-off losses

▪ UPS/EPS, Robotics

▪ Short tail current for over 20KHz

Package : V1

Absolute Maximum Ratings @ Tj=25℃ (Per Leg)

Symbol

Parameter

Condition

Ratings

Unit

VCES

VGES

Collector-to-Emitter Voltage

TC = 25℃

600

± 20

Gate emitter voltage

Continuous Collector Current

Pulsed collector current

TC = 80℃ (25℃)

TC = 25℃

100 (130)

200

ICP

Diode Continuous Forward Current

Diode Maximum Forward Current

Short circuit test, VGE = 15V, VCC = 360V

Isolation Voltage test

TC = 80℃ (25℃)

TC = 25℃

100 (130)

200

IFM

TC = 150℃ (25℃)

AC @ 1 minute

6 (8)

㎲

Viso

2500

Junction Temperature

-40 ~ 150

-40 ~ 125

190

℃

Tstg

Weight

Storage Temperature

Weight of Module

Mounting torque with screw : M5

2.0

N.m

Static Characteristics @ Tj = 25℃ (unless otherwise specified)

Parameters

Min

Typ

Max

Unit

Test conditions

VCE(ON)

VGE(th)

ICES

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

1.50

5.8

ㅡ

1.95

6.5

5.0

400

2.0

ㅡ

IC = 100A, VGE = 15V

VCE = VGE, IC = 4㎃

VGE = 0V, VCE = 600V

VCE = 0V, VGE = 20V

IF = 100A, VGE = 0V

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Diode Forward Voltage Drop

Integrated gate resistor

ㅡ

㎃

㎁

IGES

ㅡ

VFM

1.6

RGINT

Ω

- 1 -

12 3 4

中文翻译

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