Datasheet > SIM100D12SV1

SIM100D12SV1

更新时间： 2024-11-18 07:03:51

品牌	Logo	应用领域
SEMIWELL		双极性晶体管
页数	文件大小	规格书
7页	502K
描述
HALF-BRIDGE IGBT

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中文翻译

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数据手册

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SIM100D12SV1 数据手册

SIM100D12SV1

Preliminary

VCES = 1200V

Ic = 100A

“HALF-BRIDGE” IGBT

Features

V^CE(ON)typ. = 1.7V

@ Ic = 100A

Applications

▪Trench gate + field stopper, using

▪ AC & DC Motor controls

▪ VVVF inverters

Infineon chip design

▪ 10µs Short circuit capability

▪ Low turn-off losses

▪ Optimized for high frequency inverter

Type Welding machines

▪ High frequency SMPS

▪ UPS, Robotics

▪ Short tail current for over 18KHz

▪ Positive V^CE(on)

temperature coefficient

Package : V1

Absolute Maximum Ratings @ Tc = 25℃ (per leg)

Symbol

Parameter

Condition

Ratings

Unit

Collector-to-Emitter Voltage

1200

VCES

VGE = 0V, IC = 500µA

Gate emitter voltage

± 20

100(140)

200

VGES

Continuous Collector Current

Pulsed collector current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Isolation Voltage test

TC = 80℃(25℃)

TC = 25℃

ICM

TC = 80℃(25℃)

TC=(25℃)

100(140)

200

IFM

TSC

µs

AC 1 minute

2500

Viso

Junction Temperature

-40 ~ 150

-40 ~ 125

190

℃

Storage Temperature

Tstg

Weight of Module

Weight

Mounting

Torque

Power Terminal Screw : M5

Terminal connection Screw : M5

3.5

- 1 -

12 3 4 5 6 7

中文翻译

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