Datasheet > SICHS5000

SICHS5000

更新时间： 2024-11-03 06:14:43

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
2页	34K
描述
Rectifier Diode,

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中文翻译

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数据手册

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SICHS5000 数据手册

SICHS2500

SICHS5000

SICHS7500

SICHS10000

SICHS12500

SICHS15000

tSENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 963, REV. -

HIGH VOLTAGE, HIGH DENSITY,

STANDARD RECOVERY, LEADED

INDUCTRIAL GRADE SILICON RECTIFIER ASSEMBLY

FEATURES:

· Low forward voltage drop

· Low reverse leakage current

· High thermal shock resistance

· Corona free construction

· V_R= 2500V – 15000V

· I_F= 2.0A

· I_R= 1.0mA

· I_FSM= 80A

· Low distributed capacitance

Absolute Maximum Ratings

PEAK

INVERSE

VOLTAGE

MAX. AVG.

OUTPUT

CURRENT

I_F(AV)

FORCED

AIR @ 600

CFM, 55°C

IN STILL

OIL @

55°C

1 CYCLE

SURGE

CURRENT

I_FSM

t_p= 8.3ms

@ T_{J MAX}

I²t

REPETITIVE

SURGE

CURRENT

I_FRM@ 25°C

PACKAGE

LENGTH

TYPE

NUMBER

t_p= 8.3ms

@ T_{J MAX}

(PIV)

Volts

Amps

2.0

Amps

4.0

Amps

A²S

Amps

Inches

55°C

100°C

SICHS2500

SICHS5000

SICHS7500

SICHS10000

SICHS12500

SICHS15000

2500

5000

7500

10000

12500

15000

1.53

2.53

3.53

4.53

5.53

6.53

2.0

1.2

Electrical Characteristics

MAXIMUM

REVERSE

CURRENT

@ PIV

MAXIMUM

PEAK

FORWARD

VOLTAGE

V_F@ I_F

MAXIMUM

REVERSE

RECOVERY

TIME À

TYPE

NUMBER

t_rr@ 25°C

I_R

mAmps

25°C 100°C

msec

SICHS2500

SICHS5000

SICHS7500

SICHS10000

SICHS12500

SICHS15000

3.45

5.75

9.20

11.50

14.95

18.40

1.0

3.0

2.5

Notes:

- Operating temperature range –40 to +125°C.

- Storage temperature range –40 to +125°C.

À Measured on discrete devices prior to assembly.

· 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 249798 ·

· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·

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