Datasheet > SI9801DY-E3

SI9801DY-E3

更新时间： 2024-10-02 14:44:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	122K
描述
Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SI9801DY-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	最大漏极电流 (Abs) (ID)：	4.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	2 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

SI9801DY-E3 数据手册

Si9801DY

Vishay Siliconix

N-/P-Channel, Reduced Q_g, Fast Switching Half-Bridge

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.055 @ V = 4.5 V

"4.5

"3.8

"4.0

"3.0

N-Channel

P-Channel

0.075 @ V = 3.0 V

0.080 @ V = –4.5 V

–20

0.120 @ V = –3.0 V

SO-8

Top View

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

"14

"20

= 25_C

= 70_C

"4.5

"3.6

"4.0

"3.0

Continuous Drain Current (T = 150__C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.7

–1.7

= 25_C

= 70_C

2.0

1.3

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N- or P-Channel

Unit

Maximum Junction-to-Ambient

thJA

62.5

_C/W

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

Document Number: 70712

S-61825—Rev. C, 16-Aug-99

www.vishay.com S FaxBack 408-970-5600

5-1

12 3 4 5 6 7

中文翻译

下载PDF

与SI9801DY-E3相关器件

型号	品牌	获取价格	描述	数据表
SI9802DY	VISHAY	获取价格	Dual N-Channel Reduced Qg, Fast Switching MOSFET
SI9802DY-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI9802DY-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SI9802DY-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SI9803BDY-E3	VISHAY	获取价格	TRANSISTOR 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SOP-8, FET Gener
SI9803DY	VISHAY	获取价格	P-Channel Reduced Qg Fast Switching MOSFET
SI9803DY-E3	VISHAY	获取价格	Transistor
SI9803DY-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 5.9A I(D), 25V, 1-Element, P-Channel, Silicon, Metal
SI9803DY-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 5.9A I(D), 25V, 1-Element, P-Channel, Silicon, Metal
SI9804DY	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET