Datasheet > SI4812BDY

SI4812BDY

更新时间： 2024-11-09 09:26:03

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
9页	251K
描述
N-Channel 30-V (D-S) MOSFET with Schottky Diode

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SI4812BDY 数据手册

Si4812BDY

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

MOSFET PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Available

LITTLE FOOT^®Plus Power MOSFET

V_DS(V)

R_DS(on)(Ω)

I_D(A)

9.5

0.016 at V_GS= 10 V

0.021 at V_GS= 4.5 V

•

7.7

100 % R_gTested

SCHOTTKY PRODUCT SUMMARY

V_SD(V)

V_DS(V)

I_F(A)

Diode Forward Voltage

0.50 V at 1.0 A

SO-8

1.4

Schottky Diode

N-channel MOSFET

Top View

Ordering Information:

Si4812BDY-T1-E3 (Lead (Pb)-free)

Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Limit

Parameter

Symbol

Unit

10 s

Steady State

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

V_DS

V_GS

I_D

T_A= 25 °C

T_A= 70 °C

9.5

7.7

7.3

5.9

Continuous Drain Current (T_J= 150 °C) (MOSFET)^{a, b}

I_DM

I_S

Pulsed Drain Current (MOSFET)

Continuous Source Current (MOSFET Diode Conduction)^{a, b}

Average Forward Current (Schottky)

2.1

1.4

1.2

0.8

I_F

I_FM

I_AS

E_AS

Pulsed Forward Current (Schottky)

Single Pulse Avalanche Current

L = 0.1 mH

Avalanche Energy

1.25

T_A= 25 °C

_A= 70 °C

T_A= 25 °C

2.5

1.6

2.0

1.3

1.4

0.9

1.2

0.8

Maximum Power Dissipation (MOSFET)^{a, b}

P_D

Maximum Power Dissipation (Schottky)^{a, b}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Device

Symbol

Typical

Maximum

Unit

MOSFET

Schottky

MOSFET

Schottky

MOSFET

Schottky

Maximum Junction-to-Ambient (t ≤ 10 s)^a

R_thJA

Maximum Junction-to-Ambient (t = Steady State)^a

Maximum Junction-to-Foot (t = Steady State)^a

°C/W

100

R_thJF

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 10 s.

Document Number: 73038

S-83039-Rev. D, 29-Dec-08

www.vishay.com

12 3 4 5 6 7...9

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