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SI4739-C40-GM PDF预览

SI4739-C40-GM

更新时间: 2024-02-20 22:19:31
品牌 Logo 应用领域
芯科 - SILICON 电信电信集成电路
页数 文件大小 规格书
42页 1752K
描述
Telecom Circuit, 1-Func, CMOS, ROHS COMPLIANT, QFN-20

SI4739-C40-GM 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, QFN-20Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.7
JESD-30 代码:S-XQCC-N20长度:3 mm
功能数量:1端子数量:20
最高工作温度:85 °C最低工作温度:-20 °C
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:0.6 mm
标称供电电压:3.3 V表面贴装:YES
技术:CMOS电信集成电路类型:TELECOM CIRCUIT
温度等级:OTHER端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
Base Number Matches:1

SI4739-C40-GM 数据手册

 浏览型号SI4739-C40-GM的Datasheet PDF文件第1页浏览型号SI4739-C40-GM的Datasheet PDF文件第2页浏览型号SI4739-C40-GM的Datasheet PDF文件第3页浏览型号SI4739-C40-GM的Datasheet PDF文件第5页浏览型号SI4739-C40-GM的Datasheet PDF文件第6页浏览型号SI4739-C40-GM的Datasheet PDF文件第7页 
Si4736/37/38/39-C40  
1. Electrical Specifications  
Table 1. Recommended Operating Conditions1  
Parameter  
Symbol Test Condition  
Min  
2.7  
1.85  
10  
Typ  
Max  
5.5  
3.6  
Unit  
V
2
Supply Voltage  
V
DD  
Interface Supply Voltage  
V
V
IO  
DDRISE  
Power Supply Powerup Rise Time  
Interface Power Supply Powerup Rise Time  
V
µs  
µs  
C  
V
10  
IORISE  
Ambient Temperature  
T
–20  
25  
85  
A
Note:  
1. All minimum and maximum specifications apply across the recommended operating conditions. Typical values apply at  
VDD = 3.3 V and 25 C unless otherwise stated.  
2. SSOP devices operate down to VDD = 2 V at 25 °C.  
Table 2. Absolute Maximum Ratings1,2  
Parameter  
Supply Voltage  
Symbol  
Value  
–0.5 to 5.8  
–0.5 to 3.9  
10  
Unit  
V
V
DD  
Interface Supply Voltage  
V
V
IO  
IN  
3
Input Current  
I
mA  
V
3
Input Voltage  
V
T
–0.3 to (V + 0.3)  
IN  
IO  
Operating Temperature  
Storage Temperature  
–40 to 95  
–55 to 150  
0.4  
C  
C  
OP  
T
STG  
4
RF Input Level  
V
PK  
Notes:  
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation  
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond  
recommended operating conditions for extended periods may affect device reliability.  
2. The Si4736/37/38/39 devices are high-performance RF integrated circuits with certain pins having an ESD rating of <  
2 kV HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.  
3. For input pins SCLK, SEN, SDIO, RST, RCLK, and DCLK.  
4. At RF input pins, FMI and AMI.  
4
Rev. 1.0  

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