Datasheet > SI4752DY

SI4752DY

更新时间： 2022-10-18 18:25:40

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
10页	244K
描述
N-Channel 30 V (D-S) MOSFET with Schottky Diode

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New Product

Si4752DY

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)()

I_D(A)^a

Q_g(Typ.)

SkyFET^Monolithic TrenchFET^Power

MOSFET and Schottky Diode

100 % R_gand UIS Tested

0.0055 at V_GS= 10 V

0.0076 at V_GS= 4.5 V

•

13.8 nC

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook PC

- System Power

VRM, POL, Server

Synchronous Rectifier Switch

SO-8

•

Schottky Diode

Top View

Ordering Information: Si4752DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)

I_D

17.4^{b, c}

13.8^{b, c}

T_A= 70 °C

Pulsed Drain Current (300 µs)

I_DM

I_S

T_C= 25 °C

5.6

2.7^{b, c}

Continuous Source-Drain Diode Current

T_A= 25 °C

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

I_AS

L = 0.1 mH

E_AS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

6.25

4.0

3.0^{b, c}

1.9^{b, c}

- 55 to 150

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typ.

Max.

Unit

°C/W

R_thJA

R_thJF

t  10 s

Steady State

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 66819

S10-2008-Rev. A, 06-Sep-10

www.vishay.com

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